Allicdata Part #: | IRLU3714PBF-ND |
Manufacturer Part#: |
IRLU3714PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A I-PAK |
More Detail: | N-Channel 20V 36A (Tc) 47W (Tc) Through Hole I-PAK |
DataSheet: | IRLU3714PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 47W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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:IRLU3714PBF is a single N-channel MOSFET, designed to operate in a wide range of voltage and temperature applications. The part operates as a high-speed switching device and can be used to provide isolated reverse blocking, load switching, protection, and current sensing. It is also used in multiple power applications such as motor controls and DC-DC converters.
A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a voltage-controlled device used for the control of current or voltage. It can be used to switch an analog or digital signal, and it is used in switching and amplification circuits. Like a standard transistor, a MOSFET uses two electrodes to control a circuit. It also includes two capacitors, called gate capacitors.
The IRLU3714PBF is an N-channel MOSFET, meaning that it contains an N-type (p-type) semiconductor material as the gate electrode. This is called a depletion-mode MOSFET. It operates in a depletion-mode when the gate electrode is at zero volts, meaning that when the gate voltage is at zero, the MOSFET allows current to flow freely between the source and the drain.
When a voltage is applied to the gate of the MOSFET, it becomes an enhancement-mode device. This means that the MOSFET will block the flow of current from the source to the drain if the gate voltage is higher than the drain voltage. This make it ideal for use as a switching device, as it will only turn on when the gate voltage is applied, allowing current to flow.
The IRLU3714PBF can be used in many applications, such as load switching, protection, and current sensing. It is also used to provide isolation between electrical signals. Its low on-state resistance and low threshold voltage make it ideal for high-frequency switching applications. Additionally, the IRLU3714PBF has a wide gate voltage range of -5 V to 12 V, making it suitable for use in wide range of applications.
In conclusion, the IRLU3714PBF is a highly versatile single N-channel MOSFET. It is a depletion-mode device, meaning that it operates in a depletion-mode when the gate voltage is at zero. The IRLU3714PBF has a wide range of applications, including load switching, protection, and current sensing. Its low on-state resistance and wide gate voltage range make it ideal for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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