| Allicdata Part #: | IRLU110ATU-ND |
| Manufacturer Part#: |
IRLU110ATU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 4.7A I-PAK |
| More Detail: | N-Channel 100V 4.7A (Tc) 2.5W (Ta), 22W (Tc) Throu... |
| DataSheet: |  IRLU110ATU Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 22W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 235pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 440 mOhm @ 2.35A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IRLU110ATU is a type of power MOSFET which belongs to the single (or single-gate) form of field effect transistors (FETs). It has various features including low on-state resistance, low gate charge, low gate resistance, and high switching performance. This article will discuss the application field and working principle of IRLU110ATU.
Application Field
IRLU110ATU can be found in various applications, including automotive electronics, power supplies, computers, and audio amplifiers. Its low on-state resistance and fast switching capabilities make it ideal for use as a main switch in automotive electronics, power supplies, and audio amplifiers. Its low gate charge and low gate resistance also make it ideal for high-speed synchronous rectifier applications. Additionally, its high input impedance and high stability make it suitable for use in computers and telecommunications applications.Working Principle
IRLU110ATU operates via the field effect principle. In this process, a voltage applied to the input induces a current that creates an electric field. This electric field affects the behavior of charge carriers in the channel between the source and drain terminals. In the on-state, carriers are driven from the source to the drain, resulting in current flow. In the off-state, the electric field forces the carriers towards the source, resulting in no current flow. This process is also referred to as the "pinch-off" effect.In terms of power dissipation, IRLU110ATU is highly efficient. Its low on-state resistance allows it to dissipate less energy than other MOSFETs. It also has extreme temperature tolerance, with a maximum operating temperature of up to 175 °C. This makes it ideal for use in a variety of harsh environments.Overall, IRLU110ATU is a versatile and reliable power MOSFET with various application fields and a well-functioning working principle. Its low on-state resistance, low gate charge and high switching performance make it suitable for the automotive, power supply, computer, and audio sectors, while its extreme temperature tolerance makes it suitable for use in harsh environments. Additionally, its low power dissipation and high input impedance make it suitable for high-speed synchronous rectifier applications in the telecommunications sector.The specific data is subject to PDF, and the above content is for reference
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