Allicdata Part #: | IRLU3715-ND |
Manufacturer Part#: |
IRLU3715 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A I-PAK |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Through... |
DataSheet: | IRLU3715 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU3715 is a single N-Channel MOSFET made by a process called lithography. It is a voltage controlled field effect transistor (FET) and is used in power control applications. This article aims to explain the application field and working principle of this device.
Application Field:
The IRLU3715 is a commonly used power MOSFET for use in power control circuits, such as buck converters, choppers, motor control and other power conversion applications. The IRLU3715 is also popularly used in synchronous rectification circuits and high voltage applications. It has a maximum drain-source voltage (VDS) of 97V and a maximum drain current (ID) of 15A typical. This makes the IRLU3715 suitable for a wide variety of applications.
Working Principle:
The IRLU3715 is a N-Channel MOSFET, which is a type of voltage-controlled field effect transistor (FET) with a N-type conducting channel. This device consists of two sets of electrodes separated by an insulator. The electrodes in the first set form the source and drain, while the electrodes in the second set form the gate. The gate electrode is insulated from the source and drain electrodes by a thin layer of oxide insulation. The device works by controlling the amount of current that flows through the MOSFET. When a voltage is applied to the gate, the thin oxide insulation layer becomes narrower, allowing electrons to flow from the source to the drain. By controlling the source-gate voltage, the amount of current flowing between the source and drain can be controlled. This is the basic operating principle of the IRLU3715.
Conclusion:
The IRLU3715 is a single N-Channel MOSFET commonly used in power control applications. It has a maximum drain-source voltage of 97V and a maximum drain current of 15A typical. The device works by controlling the amount of current that flows through the MOSFET by controlling the source-gate voltage. This makes the IRLU3715 a suitable device for a wide variety of applications ranging from power control to motor control and high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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