IRLU014N

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IRLU014N is a type of power transistor MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). This device is designed to provide efficient switching performance with low on-resistance, high-current capability and high-temperature performance. It can be used as an amplifier, voltage regulator, gate driver or as a switch in digital and power applications.

An IRLU014N is a type of enhancement-mode MOSFET. In enhancement mode, the current-conducting channel only exists when the gate-source voltage (VGS) is positive (greater than the threshold voltage, VTH). This means that the device turns “on” when VGS is greater than VTH. When VGS is zero or negative, the device turns “off”.

The IRLU014N is a dual N-Channel, enhancement-mode power MOSFET, which can be used for power switching application, such as buck converter, boost converter and various other high-current applications. The device has low on-resistance for better switching performance and is capable of supporting high current levels. The IRLU014N is suitable for use in an operating temperature range from -55°C to 175°C.

The main applications for an IRLU014N device include class-D audio amplifiers, voltage regulators, gate drivers, power sources, DC-to-DC converters, LED drivers, motor drivers and bridge rectifiers. It can also be used as a high-side power switch in a power circuit. This type of MOSFET also features a fast switching time, which makes it an ideal choice for high-speed switching applications.

The IRLU014N is an N-Channel MOSFET that operates in an enhancement mode. It has an externally adjustable threshold voltage and an on-resistance rating of 4.5 ohms. It is designed to handle maximum drain current up to 3A. The device also features a low gate-to-source capacitance, making it suitable for use in high-frequency switching applications. It can withstand breakdown voltages up to 80V.

The IRLU014N’s working principle is based on the passage of current from the source to the drain through the channel when the gate-source voltage is greater than the threshold voltage. When the gate-source voltage is zero or lowered to a negative voltage, the current flow is blocked and the device is in the “off” state. The device is also designed with an internal body diode, which is used to protect the device during reverse-bias conditions.

In summary, the IRLU014N is a type of power MOSFET designed to provide efficient switching performance with low on-resistance and high-current capability. It is capable of handling up to 3A of drain current and may be used for various high-current applications, such as class-D audio amplifiers, voltage regulators, gate drivers and DC-to-DC converters. Its working principle is based on the passage of current from the source to the drain through the channel when the gate-source voltage is greater than the threshold voltage.

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