IXFH14N60P3 Allicdata Electronics
Allicdata Part #:

IXFH14N60P3-ND

Manufacturer Part#:

IXFH14N60P3

Price: $ 2.50
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 14A TO-247
More Detail: N-Channel 600V 14A (Tc) 327W (Tc) Through Hole TO-...
DataSheet: IXFH14N60P3 datasheetIXFH14N60P3 Datasheet/PDF
Quantity: 1000
30 +: $ 2.24952
Stock 1000Can Ship Immediately
$ 2.5
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 327W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 540 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH14N60P3 is a type of single enhancement-mode N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is widely used in a variety of applications and can be incorporated in a wide range of power designs. This article will discuss the application field of the IXFH14N60P3, as well as its working principle.

The IXFH14N60P3 has a drain current capability of 12.5A and an on-state resistance of 6.9mΩ. It also has an on-state voltage rating of 650V, which makes it suitable for high voltage applications. It can handle a maximum power dissipation of 225W and has a high saturation voltage of 3.2V. It is compatible with both linear and pulse driving modes, and is temperature stable up to 125 Celsius. This makes the IXFH14N60P3 ideal for use in high power, high current applications such as motion and power supply controls, DC-DC converters, low-voltage and high-voltage motor drives, and RV circuits.

The IXFH14N60P3 works according to the basic principles of MOSFET. It has a gate, source and drain terminal to which a voltage can be applied. When a voltage is applied to the gate, it generates an electric field which attracts electrons from the source and accelerates them towards the drain, resulting in current flow. This is known as the gate-source voltage (Vgs) and is used to control the current flow through the device. As the voltage increases, so does the current. With low gate-source voltages, the current flow through the device is limited to the kind of leakage current associated with MOSFETs.

The IXFH14N60P3 also has a reverse body diode, which allows the current to flow in the opposite direction under the right conditions. This enables the device to be used in a variety of circuits, such as rectifier and level shift circuits. This diode also provides a level of protection from over-voltage spikes.

The IXFH14N60P3 is a versatile MOSFET and can be used in a variety of applications. It is ideal for use in high power, high current applications such as motor drive circuits, DC-DC converters, and industrial automation equipment. It is also suitable for automotive applications, where its temperature and voltage rating make it a reliable and efficient choice.

The specific data is subject to PDF, and the above content is for reference

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