IXFH150N17T Allicdata Electronics
Allicdata Part #:

IXFH150N17T-ND

Manufacturer Part#:

IXFH150N17T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 175V 150A TO-247
More Detail: N-Channel 175V 150A (Tc) 830W (Tc) Through Hole TO...
DataSheet: IXFH150N17T datasheetIXFH150N17T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 3mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 830W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
Vgs (Max): --
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Series: TrenchHV™
Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 175V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFH150N17T is a vertical double-diffused metal-oxide-semiconductor field-effect transistor (MOSFET). As the name implies, it is a type of transistor that has metal-oxide-semiconductor (MOS) technology integrated into its design. In this article, we will discuss the application field and working principle of the IXFH150N17T.

Application Field of IXFH150N17T

The IXFH150N17T is a high voltage device suitable for use in power supply and other switching applications. It offers low on-resistance and high switching speed, which makes it ideal for high power applications. It can also be used in solar and photovoltaic applications. Furthermore, due to its wide voltage range, it can be used to control the speed of DC motors as well as to switch between different AC/DC input sources. The IXFH150N17T is also suitable for use in automotive and general purpose applications.

Working Principle of IXFH150N17T

The IXFH150N17T is a vertical double_diffused MOSFET, which means that the gate, drain, and source are all made from doped silicon material. The gate is insulated from the source and drain by an oxide layer, making the device operate in a manner similar to an active circuit element. It uses an insulated-gate field-effect transistor (IGFET) structure for its transistors. It also has an n-channel and a p-channel device, which are connected in a cascode configuration. This allows for high voltage operation, as the voltage is shared between the two devices. The device is controlled by its gate voltage, which allows it to be used as a switch. When the gate voltage is low, the device is “off” and no current can flow between the source and drain. When the gate voltage is increased, the device starts to conduct and current can flow from the source to the drain. This enables the IXFH150N17T to be used for power supply or motor speed control applications.

Conclusion

The IXFH150N17T is a vertical double-diffused MOSFET that is suitable for use in power supply, solar and photovoltaic, and motor speed control applications. It has a low on-resistance and high switching speed, making it ideal for high power applications. The device is controlled by its gate voltage, which allows it to be used as a switch. It uses an IGFET structure and is connected in a cascode configuration, allowing it to operate at high voltages.

The specific data is subject to PDF, and the above content is for reference

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