Allicdata Part #: | IXFH150N17T-ND |
Manufacturer Part#: |
IXFH150N17T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 175V 150A TO-247 |
More Detail: | N-Channel 175V 150A (Tc) 830W (Tc) Through Hole TO... |
DataSheet: | IXFH150N17T Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 3mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 830W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9800pF @ 25V |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
Series: | TrenchHV™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 175V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFH150N17T is a vertical double-diffused metal-oxide-semiconductor field-effect transistor (MOSFET). As the name implies, it is a type of transistor that has metal-oxide-semiconductor (MOS) technology integrated into its design. In this article, we will discuss the application field and working principle of the IXFH150N17T.
Application Field of IXFH150N17T
The IXFH150N17T is a high voltage device suitable for use in power supply and other switching applications. It offers low on-resistance and high switching speed, which makes it ideal for high power applications. It can also be used in solar and photovoltaic applications. Furthermore, due to its wide voltage range, it can be used to control the speed of DC motors as well as to switch between different AC/DC input sources. The IXFH150N17T is also suitable for use in automotive and general purpose applications.
Working Principle of IXFH150N17T
The IXFH150N17T is a vertical double_diffused MOSFET, which means that the gate, drain, and source are all made from doped silicon material. The gate is insulated from the source and drain by an oxide layer, making the device operate in a manner similar to an active circuit element. It uses an insulated-gate field-effect transistor (IGFET) structure for its transistors. It also has an n-channel and a p-channel device, which are connected in a cascode configuration. This allows for high voltage operation, as the voltage is shared between the two devices. The device is controlled by its gate voltage, which allows it to be used as a switch. When the gate voltage is low, the device is “off” and no current can flow between the source and drain. When the gate voltage is increased, the device starts to conduct and current can flow from the source to the drain. This enables the IXFH150N17T to be used for power supply or motor speed control applications.
Conclusion
The IXFH150N17T is a vertical double-diffused MOSFET that is suitable for use in power supply, solar and photovoltaic, and motor speed control applications. It has a low on-resistance and high switching speed, making it ideal for high power applications. The device is controlled by its gate voltage, which allows it to be used as a switch. It uses an IGFET structure and is connected in a cascode configuration, allowing it to operate at high voltages.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXFH160N15T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 160A TO-... |
IXFH22N50P | IXYS | -- | 44 | MOSFET N-CH 500V 22A TO-2... |
IXFH26N50P3 | IXYS | -- | 68 | MOSFET N-CH 500V 26A TO-2... |
IXFH26N60P | IXYS | 5.03 $ | 44 | MOSFET N-CH 600V 26A TO-2... |
IXFH30N50P | IXYS | -- | 23 | MOSFET N-CH 500V 30A TO-2... |
IXFH34N65X2 | IXYS | -- | 65 | MOSFET N-CH 650V 34A TO-2... |
IXFH42N60P3 | IXYS | 5.54 $ | 30 | MOSFET N-CH 600V 42A TO24... |
IXFH50N60P3 | IXYS | 5.89 $ | 37 | MOSFET N-CH 600V 50A TO24... |
IXFH52N50P2 | IXYS | 6.53 $ | 47 | MOSFET N-CH 500V 52A TO24... |
IXFH9N80 | IXYS | 6.97 $ | 3 | MOSFET N-CH 800V 9A TO-24... |
IXFH24N80P | IXYS | -- | 43 | MOSFET N-CH 800V 24A TO-2... |
IXFH21N50 | IXYS | 6.99 $ | 60 | MOSFET N-CH 500V 21A TO-2... |
IXFH36N60P | IXYS | -- | 88 | MOSFET N-CH 600V 36A TO-2... |
IXFH76N07-12 | IXYS | 7.4 $ | 69 | MOSFET N-CH 70V 76A TO-24... |
IXFH6N100Q | IXYS | 7.43 $ | 73 | MOSFET N-CH 1000V 6A TO-2... |
IXFH76N07-11 | IXYS | 7.77 $ | 237 | MOSFET N-CH 70V 76A TO-24... |
IXFH40N85X | IXYS | -- | 25 | MOSFET NCH 850V 40A TO247... |
IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
IXFH14N100Q2 | IXYS | -- | 58 | MOSFET N-CH 1000V 14A TO-... |
IXFH270N06T3 | IXYS | 4.46 $ | 139 | 60V/270A TRENCHT3 HIPERFE... |
IXFH30N85X | IXYS | 7.88 $ | 8 | MOSFET N-CH 850V 30A TO24... |
IXFH180N20X3 | IXYS | 9.26 $ | 15 | 200V/180A ULTRA JUNCTION ... |
IXFH60N65X2 | IXYS | -- | 60 | MOSFET N-CH 650V 60A TO-2... |
IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
IXFH13N50 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 13A TO-2... |
IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
IXFH32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFH58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFH14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFH150N17T | IXYS | -- | 1000 | MOSFET N-CH 175V 150A TO-... |
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