IXFH80N06

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The IXFH80N06 is a high-performance vertical Ptot MOSFET optimized for high-speed switch-mode applications. It has a high switching speed and a low on-resistance value for increased current flow, making it a veteran in the world of power MOSFETs. This device was designed to provide the best performance in applications where fast signal rise-times, high and low-side switch performance, and high frequency operations are critical. It is useful in a wide variety of high-speed switching applications where low gate drive is required or space is limited.

The IXFH80N06 is a rugged vertical power transistor, specifically designed for full-load applications. It is available in four different sizes: 2.5, 3.5, 4.5, and 5.5. It also comes with a variety of packaging options including TO-220, TO-220F, TO-263, SO-8 and MSOP-8. It is rated for a maximum drain-source voltage of 80V and a maximum drain current of 8A. Your board space isn’t a problem either, as the IXFH80N06 fits on 3mm2 footprint.

The IXFH80N06 works on the principle of an insulated-gate bipolar transistor (IGBT). It is designed specifically for high-speed switching applications, where extremely low gate thresholds and high-frequency performance are required. It operates on two principals: avalanche ratings and Peak Reversible Voltage (PIV). The avalanche ratings, determined by a J(vsl) vs J(vs) plot, determine the maximum voltage at which a given drain-source current can be achieved. The PIV, determined by an V(piv) vs. V(sl) plot, determine the highest DC electrical field at which the device will sustain its breakdown voltage.

The IXFH80N06 is well suited for use in high-speed adaptors, converters, and switches. It is an ideal choice for DC-DC converters in notebook PCs, battery chargers, PWM inductive loads, LCD Power Supplies, and Microprocessor Bus Terminals. It also has excellent performance in High Side Gate Switch and other applications requiring long-term reliability and high-power switching.

In addition, the IXFH80N06 has a low gate-source input threshold voltage making it suitable for logic level switching applications, and a low Capacitance Coss allowing for high frequency operation. It features a temperature Soar Rejection Rate (TSRR) of 80°C and contains parasitic diodes capable of handling high frequency signal switching. The IXFH80N06 is also designed for ease of use and comes in a variety of options including an integrated heatsink.

In conclusion, the IXFH80N06 is an ideal choice for a variety of applications including DC-DC converters, chargers, PWM inductive loads, LCD Power Supplies, and Microprocessor Bus Terminals. It provides excellent performance in high-side GSW applications, high-speed switching, and long-term reliability. The low gate-source input threshold voltage makes it suitable for logic-level switching applications, and the low Capacitance Coss allows for high-frequency operation. With its integrated heatsink, the IXFH80N06 can be used in a wide range of applications and offers excellent heat dissipation.

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