| Allicdata Part #: | IXFH20N60-ND |
| Manufacturer Part#: |
IXFH20N60 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 20A TO-247AD |
| More Detail: | N-Channel 600V 20A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXFH20N60 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 350 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IXFH20N60 is a N-channel MOSFET that belongs to the IXF family. It is produced by Infineon, a world leader in the semiconductor industry. The device features a low R DS(on) and fast switching time making it an ideal power switch in many applications. This article will discuss the application field and working principle of the IXFH20N60.The IXFH20N60 is commonly used in a variety of applications. It can be used to switch DC and AC signals, as well as being used as an ideal power switch in high-reliability applications such as power inverters and motor drivers. The device also features a low on-state resistance, making it suitable for high power efficiency applications. Another advantage of the IXFH20N60 is its wide input voltage range, from 4.5V to 20V, allowing for a wide range of power applications.The working principle of the IXFH20N60 is based on the concept of a metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are a type of insulated-gate FieldEffect Transistors (FETs) which act as switches in electronic circuits. In conventional MOSFETs, an electric field is used to control the flow of electrons in the device. However, the IXFH20N60 has an additional gate-to-source capacitance, allowing it to be operated as a nearly-zero-volt gate voltage switch.The IXFH20N60 is a MOSFET which has an N-type channel. This means that the device has an N-doped semiconductor channel through which electrons can flow when a suitable gate-to-source voltage is applied. This is referred to as a \'depletion mode\' MOSFET. When a positive voltage is applied to the gate, the positively charged carriers repel the electrons in the channel. This decreases the conductivity of the channel, reducing the current flow. When a negative voltage is applied to the gate, the negatively charged carriers attract the electrons in the channel. This increases the conductivity of the channel, allowing more current to pass through. The IXFH20N60 also has a very low input capacitance, allowing it to have fast switching times. The device is able to switch on and off rapidly and can handle relatively large currents.The IXFH20N60 is a versatile MOSFET that is suitable for a wide range of applications. It has a low on-state resistance, making it ideal for high-efficiency power switching applications. The device is also able to switch on and off quickly, allowing for fast response times in motor drivers and inverters. With its wide input voltage range, the IXFH20N60 is an excellent choice for a variety of power applications.The specific data is subject to PDF, and the above content is for reference
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