IXFH26N60P Allicdata Electronics
Allicdata Part #:

IXFH26N60P-ND

Manufacturer Part#:

IXFH26N60P

Price: $ 5.03
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 26A TO-247
More Detail: N-Channel 600V 26A (Tc) 460W (Tc) Through Hole TO-...
DataSheet: IXFH26N60P datasheetIXFH26N60P Datasheet/PDF
Quantity: 44
1 +: $ 4.56750
30 +: $ 3.74283
120 +: $ 3.37764
510 +: $ 2.82990
1020 +: $ 2.46475
Stock 44Can Ship Immediately
$ 5.03
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 460W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: PolarHV™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH26N60P is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is commonly used for applications in the electrical engineering and automotive fields. This particular device, manufactured by IXYS Corporation, is a low-power and low-cost MOSFET that can be used for signals switching and as a power switching device. In this article, we will look at the application field and working principle of the IXFH26N60P.

The IXFH26N60P is a 600V N-channel MOSFET with a maximum drain source voltage of 80V, a maximum drain current of 4A, and a maximum gate-source voltage ratings of ±20V. This device is suitable for applications such as power switching, USB power management, PWM control, and voltage sensing. Because of its low-power properties, the IXFH26N60P is also suitable for applications in the automotive and industrial fields, such as in engine control, anti-lock braking systems, or motor control.

The working principle of the IXFH26N60P is based on the physics of a metal oxide field effect transistor, which is a type of transistor that is constructed from a metal oxide semiconductor. Basically, when voltage is applied across the metal oxide layer, the resistance of the device changes. This change in resistance then enables the device to control the flow of electric current. The IXFH26N60P is a special type of MOSFET that is designed to control power in a wide variety of applications.

The IXFH26N60P also has several benefits that make it well suited for many power management applications. It has a low on-resistance and gate charge, making it difficult for large power surges or fluctuations to damage the device. It also has a high operating temperature range, allowing it to be used in various types of environments. Finally, the IXFH26N60P has an excellent maximum drain source voltage rating of 80V, making it well suited for applications requiring a high voltage rating.

In conclusion, the IXFH26N60P is a reliable and cost-effective MOSFET that is suitable for a variety of applications. It has a wide operating temperature range and outstanding maximum drain source voltage of 80V, which enables it to be used in a range of electrical and automotive applications. Additionally, its low on-resistance and gate charge make it well suited to protect against power sur­ges and fluctuations. Therefore, the IXFH26N60P is well suited for applications requiring a low-power, low-cost MOSFET.

The specific data is subject to PDF, and the above content is for reference

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