IXFH88N20Q

Vgs(th) (Max) @ Id:	4V @ 4mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD (IXFH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4150pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	146nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	30 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	88A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<h3>Introduction</h3>IXFH88N20Q is a single Field-Effect Transistor (FET). This device is capable of switching high-power voltage and current on and off using small logic-level signals. It is also known as a Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET), and is one of the most commonly used power semiconductor devices in the world. In this article, we will discuss the application field and working principle of the IXFH88N20Q.<h3>Application Field</h3>The IXFH88N20Q is a versatile and robust device suitable for a wide range of applications. This device can be used wherever a high-power FET is required, such as in power switching circuits, audio amplifiers, motor control systems, and even in automotive applications. Additionally, the IXFH88N20Q has an integrated logic-level signal, making it ideal for interfacing with microcontrollers and other digital systems.<h3>Working Principle</h3>The IXFH88N20Q works according to the principle of FETs or MOSFETs. FETs work by using an electric field to control the movement of carriers (electrons or holes) between a source and a drain. In the IXFH88N20Q, the source, drain, and gate are all isolated from each other and connected to distinct terminals. The gate is controlled by an external logic signal. When the gate is at one voltage level, the source-drain channel is switched on and the device is said to be in the “on” state; when it is at another voltage level, the channel is switched off and the device is said to be in the “off” state. The switch on/off responsiveness of the IXFH88N20Q is quite fast, typically in the range of nanoseconds.<h3>Benefits of IXFH88N20Q</h3>The IXFH88N20Q is a particularly useful device because of its high power-handling ability, its relatively low gate-to-source or drain-to-source capacitance, and its fast switching speed. All these features make it well-suited for high-frequency switching applications. Additionally, its integrated logic gate allows it to be connected directly to controllers and processors, eliminating the need for extra components in the system.<h3>Conclusion</h3>The IXFH88N20Q is a powerful, versatile, and robust FET suitable for a variety of applications. Its integrated logic gate allows it to be connected directly to controllers and processors, and its fast switching speed makes it well-suited for high-frequency switching applications. This device has many benefits, and its high power-handling capability make it a clear choice for many power control applications.

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