IXFH12N90

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFH12N90 is an insulated gate field effect transistor (IGFET) that utilizes N-channel vertical double diffused planar transistor (power MOSFET) technology. It is specially designed for use in a wide range of high voltage, high current switching applications. This device is designed to provide excellent power efficiency, robustness and reliability, even in extreme conditions. It is commonly used in switchmode power supplies, inverters, and other power electronic applications.

The IXFH12N90 is a P-channel IGFET, which means it can be used in either a source-type or drain-type configuration, depending on the specific circuit requirements. This device consists of two MOSFETs in a single package, with a maximum voltage rated at 1200 volts. It has a maximum current rating of 12A and an on-state resistance of 0.048 ohm. It has a power dissipation rating of 58W and an operating junction temperature of -55°C to 175°C.

The IXFH12N90\'s application field encompasses a wide range of high voltage, high amperage applications such as welding inverters, power distribution and switching, motor controls, and battery management systems, among others. It is commonly used in DC-DC converters, AC/DC converters, and solar power inverters. Additionally, it can also be used in motor control systems for high current motor drives and in battery management systems for controlling and monitoring battery inputs.

The IXFH12N90 works on the principle of controlled conduction between the source and drain terminals. When a gate voltage is applied between the gate and source terminals, the transistor enters an on-state. This allows current to flow from the source to the drain terminal with some voltage drop across the channel. As the channel size is decreased, the voltage drop also decreases, resulting in lower resistance and higher current flow.

When the gate voltage is removed, the transistor enters an off-state, where no current flow is allowed. This makes it a perfect device for high-current switching applications. The IXFH12N90 also has a lower gate charge compared to other MOSFETs, allowing the transistor to switch on and off quickly, thus providing a high level of control.

In conclusion, the IXFH12N90 is a high voltage, high current N-channel insulated gate field effect transistor (IGFET). It is specifically designed for use in a wide variety of high-current switching applications and is typically used in switchmode power supplies, inverters, and other power electronic applications. It works on the principle of controlled conduction between the source and drain terminals and has a lower gate charge compared to other MOSFETs for faster switching.

The specific data is subject to PDF, and the above content is for reference