IXFH72N30X3

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IXFH72N30X3 is a high voltage and high speed N-channel enhancement mode power field effect transistor produced by Infineon technologies. It is usually used in applications needing more than 30V drain-to-source voltage, a maximum current of 5A, and an 6 Ohm channel resistance. This device is mainly used in power switch applications, where it is necessary to control higher voltage and current in a very small package.

Overview

The IXFH72N30X3 is a strong N-channel enhancement mode power field effect transistor that is housed in a PowerFLAT- 5x6 HiPerFET, which is a small, inverted leadless package. It is capable of withstanding drain-to-source voltages of up to 30V and has a maximum channel resistance of 6 Ohms. This transistor has a Silicon Nitride (SiN) passivated surface to resist current leakage and to increase package interchangeability and reliability. The device is based on a proprietary process technology, adaptively changing the device and built-in gate protection. All devices are further tested with a high mechanical stress during the production to ensure robustness.

Features

• High blocking voltage up to 30V
• Low on-state resistance
• Silicon nitride passivated surface
• Robust leadless PowerFLATTM-5x6 package
• High speed switching
• User-friendly and nettings simpler
• AEC Q101 qualified

Applications

The IXFH72N30X3 is suitable for a variety of applications, including automotive, consumer, industrial and lighting solutions. The high blocking voltage and low on-state resistance make it ideal for use in power switch applications, such as automotive motor control, lighting and heating, battery management, motor control and monitoring in industrial applications, power supplies, and power converters.

Working Principle

The IXFH72N30X3 is an N-channel enhancement mode power field effect transistor that operates using the principle of a “pinch-off” effect. This device has a gate terminal that controls the current flow between the source and drain terminals. When the gate voltage is in its OFF-state (such as ground or negative voltage), the transistor acts like an open switch, allowing no current to flow between the source and drain terminals. When an electrical voltage or current is applied to the gate terminal, it creates an electric field which will “pinch” off the channel and make the device conductive, allowing current to flow from the source to the drain.

Conclusion

The IXFH72N30X3 by Infineon is an excellent example of a high voltage and high speed N-channel enhancement mode power field effect transistor. This device has a maximum current of 5A and a maximum blocking voltage of 30V making it perfect for applications such as automotive motor control, lighting and heating, battery management, motor control and monitoring in industrial applications, power supplies, and power converters. The use of a Silicon Nitride passivation makes the device more robust and reliable, while the 6 Ohm channel resistance aids in reducing power consumption. Depending on the application and requirements, the IXFH72N30X3 may be an ideal solution.

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