| Allicdata Part #: | IXFH150N20T-ND |
| Manufacturer Part#: |
IXFH150N20T |
| Price: | $ 8.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 150A TO-247 |
| More Detail: | N-Channel 200V 150A (Tc) 890W (Tc) Through Hole TO... |
| DataSheet: |  IXFH150N20T Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 8.00184 |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 890W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 177nC @ 10V |
| Series: | HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXFH150N20T is a high voltage metal oxide semiconductor field effect transistor (MOSFET), which belongs to the power metal oxide semiconductor field effect transistor (Power MOSFET). It is a kind of three-terminal electronic components, which are composed of metal oxide semiconductor material for gate terminal. Due to its special structure, IXFH150N20T has the characteristics of high speed switching, low gate input impedance, low on resistance, high voltage, low temperature coefficient and long service life.
IXFH150N20T plays an important and irreplaceable role in switching power supply, motor drive and other fields. IXFH150N20T is widely used in switching power sources, current sensing, electret drive and other fields. Compared with ordinary transistors and other types of MOSFETs, IXFH150N20T has the characteristics of high switching speed, low gate output impedance, low on resistance, high voltage and temperature coefficient, and long service life. These characteristics make IXFH150N20T widely used in switching power sources, current sensing, electromechanical drive and other industrial fields.
The working principle of IXFH150N20T is quite simple. It is composed of a source terminal, a drain terminal and a gate terminal. When a certain voltage is applied to the gate terminal, the gate will form an electric field, which will cause the channel of the semiconductor material to form an conductive channel. When an external voltage is applied between the source and drain terminals, the electric current can pass through this channel. Thus, the switch function of IXFH150N20T is realized, which is widely used in various electronic devices.
In short, IXFH150N20T is a kind of power MOSFET, which has the characteristics of high speed, low output impedance, low on resistance, high voltage, low temperature coefficient and long service life, so it is widely used in switching power sources, current sensing, electromechanical drive and other industries. The working principle of IXFH150N20T is also very simple. It can form an electric field between the source and drain terminals when an external voltage is applied to the gate terminal, which can form an conductive channel, thus realizing the switch function.
The specific data is subject to PDF, and the above content is for reference
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