IXFH150N20T Allicdata Electronics
Allicdata Part #:

IXFH150N20T-ND

Manufacturer Part#:

IXFH150N20T

Price: $ 8.89
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 150A TO-247
More Detail: N-Channel 200V 150A (Tc) 890W (Tc) Through Hole TO...
DataSheet: IXFH150N20T datasheetIXFH150N20T Datasheet/PDF
Quantity: 1000
30 +: $ 8.00184
Stock 1000Can Ship Immediately
$ 8.89
Specifications
Series: HiPerFET™, TrenchT2™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 25V
FET Feature: --
Power Dissipation (Max): 890W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3
Description

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IXFH150N20T is a high voltage metal oxide semiconductor field effect transistor (MOSFET), which belongs to the power metal oxide semiconductor field effect transistor (Power MOSFET). It is a kind of three-terminal electronic components, which are composed of metal oxide semiconductor material for gate terminal. Due to its special structure, IXFH150N20T has the characteristics of high speed switching, low gate input impedance, low on resistance, high voltage, low temperature coefficient and long service life.

IXFH150N20T plays an important and irreplaceable role in switching power supply, motor drive and other fields. IXFH150N20T is widely used in switching power sources, current sensing, electret drive and other fields. Compared with ordinary transistors and other types of MOSFETs, IXFH150N20T has the characteristics of high switching speed, low gate output impedance, low on resistance, high voltage and temperature coefficient, and long service life. These characteristics make IXFH150N20T widely used in switching power sources, current sensing, electromechanical drive and other industrial fields.

The working principle of IXFH150N20T is quite simple. It is composed of a source terminal, a drain terminal and a gate terminal. When a certain voltage is applied to the gate terminal, the gate will form an electric field, which will cause the channel of the semiconductor material to form an conductive channel. When an external voltage is applied between the source and drain terminals, the electric current can pass through this channel. Thus, the switch function of IXFH150N20T is realized, which is widely used in various electronic devices.

In short, IXFH150N20T is a kind of power MOSFET, which has the characteristics of high speed, low output impedance, low on resistance, high voltage, low temperature coefficient and long service life, so it is widely used in switching power sources, current sensing, electromechanical drive and other industries. The working principle of IXFH150N20T is also very simple. It can form an electric field between the source and drain terminals when an external voltage is applied to the gate terminal, which can form an conductive channel, thus realizing the switch function.

The specific data is subject to PDF, and the above content is for reference

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