IXFH94N30T

The IXFH94N30T is a high‑performance, high‑density metal oxide semiconductor field effect transistor (MOSFET) designed to help advanced power management design. It is a part of Infineon\'s OptiMOS 5 family of 30V N‑channel MOSFETs.

Application Field of IXFH94N30T

With its low threshold voltage, low gate charge and high transconductance, the IXFH94N30T is great for a variety of intermediate and high-power applications. Common applications for this device include computer power supplies, home appliances and consumer electricals, automotive and industrial motor control, and light emitting diode (LED) lighting.

The IXFH94N30T is capable of delivering very low switching losses, yet it is designed to handle high operating frequencies in the kHz range with minimized losses. This makes the IXFH94N30T an excellent choice for high frequency switching power supplies.

Working Principle of IXFH94N30T

The IXFH94N30T is a vertical type N‑channel MOSFET, with a high‑density cell structure for superior RDS(on) performance. It is constructed with a drain–gate–source structure and operated in the enhancement mode. Source–drain current is controlled by a negative gate voltage acting on a gate area that is insulated from the source and drain area. The applied gate voltage modulates the strength of the electric field between the drain and source, which controls the charge carriers between the source and the drain region.

When the IXFH94N30T is in the off state, drain–source leakage (IDSS) is very low, which contributes to the overall low power dissipation. When the gate voltage VGS is increased to the gate threshold voltage Vth, the conduction of the device increases in a linear fashion until the device is operating in saturation mode. The device has extremely low Vth, fast switching times and a very low gate charge Qg, which makes it well suited for demanding intermediate and high‑power applications.

The IXFH94N30T also has an integrated body diode for protection against reverse polarity and transient signals. This integrated body diode provides a low forward voltage drop, making the IXFH94N30T an excellent choice for switching power supplies.

Conclusion

The IXFH94N30T has superior characteristics to other MOSFETs and is an excellent choice for a variety of intermediate and high-power applications. It is capable of delivering low switching losses and high operating frequencies, making it ideal for high frequency switching power supplies. Its integrated body diode provides protection against reverse polarity and transient signals. With its low threshold voltage, low gate charge, and high transconductance, the IXFH94N30T is an invaluable MOSFET.