IXFN30N110P

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The IXFN30N110P is a cutting-edge enhancement mode NMOS Field-Effect Transistor (FET) designed for higher power applications. It is a low-voltage transistor with an operating voltage (VDS) of 40V and a driving current (ID) of 11A. The IXFN30N110P is a relatively new component developed by International Rectifier (IR), offering improved performance over their existing range.

The IXFN30N110P is designed for use in consumer PCs, HDTVs, and other low-voltage applications that require higher power-dissipation capability. Its innovative design allows for greater control over the current being delivered, helping reduce power losses and maximize available energy. This makes it an efficient component for a variety of consumer electronic applications.

The IXFN30N110P is a low-voltage FET with a low drain-source on-resistance (RDSon) of 0.36Ω. This low-resistance value enables the FET to deliver optimal performance with minimal losses. It features a built-in gate protection diode, which helps protect against miswiring and accidental reverse-polarity connection. The IXFN30N110P also has an integrated heatsink and a low thermal resistance to help maintain its reliability even when operating under intense conditions.

The IXFN30N110P works in accordance with the basic field-effect transistor principles, where a small voltage applied to the gate terminal changes the current flowing through the drain and source electrodes. In the IXFN30N110P, this basic principle is combined with a high-power switching capability to enable higher current conduction than what is commonly seen in simple FETs. This allows the device to be used for more intense power applications, such as driving high-power LEDs, where greater current is needed to achieve maximum illumination.

The IXFN30N110P is also an excellent choice for applications that require advanced control and precision. It features advanced circuit design techniques, such as gate biasing, thermal shutoff, and integrated protection diodes. The IXFN30N110P can also be parallel-connected for higher-power applications. With its low gate threshold voltage, the IXFN30N110P enables fast switching and precise control over the current being delivered.

With its superior performance and reliability, the IXFN30N110P is an ideal choice for a wide range of power applications. It is the ideal solution where a powerful, low-voltage FET is needed, offering a high-current capacity and reliable protection. Its cutting-edge design provides excellent protection against miswiring and accidental reverse-polarity connection, while also providing optimal performance with minimal losses. This makes it one of the most efficient and reliable low-voltage FETs available on the market today.

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