IXFN27N80

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The IXFN27N80 is a silicon N-channel enhancement-mode power field-effect transistor (FET). It is designed for use in low voltage, low current applications where fast switching times are needed. The IXFN27N80 is optimized for high-speed switching applications, including DC-DC converters, power amplifiers, power management, and power switches.

The IXFN27N80 is constructed using a monolithic double-diffused MOS (DMOS) process, which is a form of advanced insulated-gate semiconductor technology. This process uses two layers of diffusion to create the channel, resulting in a much lower channel resistance than standard MOSFETs. This allows for higher current-switching capability and better performance at higher frequencies.

The IXFN27N80 has an input capacitance of 10 pF, a maximum continuous drain current of 30 A and a maximum drain-source RDS (on) of 1.6 mΩ. It typically exhibits good voltage-temperature characteristics and is compatible with logic level and low-voltage gate drive circuits. The typical turn-on delay time is 2.6 ns, and the turn-off delay time is 6.3 ns. This makes it suitable for high-speed applications.

The IXFN27N80 can be used in a wide variety of applications due to its low on-state resistance, low gate input capacitance, fast switching speed and wide temperature range. This includes applications such as high-speed data communications, power amplifiers, power switches, DC-DC converters, lighting, audio systems and other high-speed switching applications. It can be used in automotive, consumer electronics, industrial and communications applications.

The working principle of the IXFN27N80 is based on the basic principle of the MOSFET. This principle states that when a small voltage is applied to the gate terminal, the resistance between the source and the drain is modulated. This allows current to flow from source to drain when the gate voltage is greater than the threshold voltage. The IXFN27N80 has a threshold voltage of 3 volts.

The current that flows through the IXFN27N80 is controlled by the amount of voltage applied to the gate terminal. The amount of current that the IXFN27N80 can handle is limited by its maximum current rating, which is 30 A. The IXFN27N80 is designed to be used in low voltage, low current applications where quick, steady switching is needed.

The IXFN27N80 is a versatile, reliable and cost-effective solution for a variety of high-speed switching applications. It is constructed using advanced processes and high-quality materials, which ensures long-term operation and a robust, reliable design. This makes the IXFN27N80 an ideal solution for a wide range of applications where fast switching speeds, low power consumption and low EMI levels are required.

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