IXFN100N50P

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The IXFN100N50P is a PowerMOSFET manufactured by Infineon Technologies AG, which utilizes the latest insulation process to achieve maximum efficiency. It is a high-power switching element suitable for power management of various digital and analogue circuits, in both low-voltage and nominal-voltage operating modes.

IXFN100N50P has a breakdown voltage of 100V and a drain-source on resistance of 50 mill Ohms. It is commonly used in smart power, automotive and audio applications, especially those which require high power performance on DC and AC, or require high speed switching with minimal noise or cross conduction, due to its fast switching capabilities.

IXFN100N50P is a depletion mode device, meaning that it does not require a gate voltage to turn on. The device operates at high frequency, and is able to handle up to 5A current. It has a low input capacitance, making it suitable for switching high-frequency signals.

The working principle of the IXFN100N50P is based on the modulation of the drain-to-source voltage, which is referred to as the \'gate\'. When a positive gate voltage is applied to the device, the drain-source voltage is increased in proportion to the amount of current applied between the gate and the source. As a result, the conductivity of the device is increased, allowing it to switch more quickly and with less noise or cross conduction.

The MOSFET technology used in the IXFN100N50P also allows for temperature control of the device. This allows the device to operate more efficiently and with better power handling performance. The IXFN100N50P is also available in several package options, including surface mount, thru-hole and DIP, allowing it to fit into almost any application.

The IXFN100N50P is an incredibly versatile device, offering superior performance in its applications. With its high power handling capabilities, high speed switching and temperature control, it is the ideal solution for most power management and analogue audio applications. Thanks to its low input capacitances and high breakdown voltage, it can be utilized for even the most demanding power management duties.

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