IXFN48N50U2

Vgs(th) (Max) @ Id:	4V @ 8mA
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B
Mounting Type:	Chassis Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	520W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	270nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	100 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	48A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IXFN48N50U2 Application Field and Working Principle

The IXFN48N50U2 is one of the most commonly used power MOSFETs today. The device is a N-channel enhancement type MOSFET with a maximum power dissipation of 1800 Watts and a gate-source voltage range of 6.0V - 20V. This device is most commonly used in the field of power management and has gained fame for its very low on-resistance and high transconductance (gm).

Features and Benefits

The IXFN48N50U2 offers several important features and benefits, including: an on-resistance of 1.2 milliohms, a maximum drain-source voltage of 500V, a gate charge of 130nC, a gate-source threshold voltage of 1.5V, a drain-source breakdown voltage of 800V, and an operating temperature range of -55°C to 150°C. It also features an extremely low avalanche voltage and an RDS(on) value of 1150mΩ. The device also has an NFET architecture, allowing the more efficient use of energy and the elimination of Miller effect.

Applications

The IXFN48N50U2 is typically used in communication systems, industrial applications, power supplies, UPSs, and motor controls. It can be used in high-voltage power regulation to provide power failure protection in applications such as over-voltage protection, over-current protection and short-circuit protection. It can also be used in applications where maximum efficiency is desired, such as high-speed switching, AC variable frequency drive, and brushless motor control.

Working Principle

The IXFN48N50U2 is a N-channel MOSFET, which is operated in an enhancement mode. This mode requires that the gate-source voltage is higher than the threshold voltage (Vth). When a positive voltage is applied to the gate-source port, an electric field is created between the gate-source and the drain-source. This field attracts electrons, allowing the current to flow across the device, from the source to the drain. The device then acts as an active switch, conducting or blocking current depending on the voltage applied to the gate. The device has a low capacitance, which enables it to switch at very high speeds, making it effective for applications such as switching power supplies and motor control. It also has a high transconductance and low gate charge, making it highly efficient.

Conclusion

The IXFN48N50U2 is one of the most popular power MOSFETs on the market today. It is used in a variety of applications, including communication systems, industrial applications, power supplies, UPSs, and motor controls. It features an extremely low avalanche voltage and an RDS(on) value of 1150mΩ. The device also has a low capacitance, a high transconductance, and a low gate charge, making it highly efficient. The IXFN48N50U2 is operated in an enhancement mode, which requires a voltage higher than the threshold voltage across the gate-source terminal. When the voltage is applied, the device can act as an active switch and conduct or block current.

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