IXFN44N100P

The IXFN44N100P is a MOSFET transistor manufactured by Infineon Technologies AG. It is a 100V N-Channel Enhancement Mode MOSFET transistor. It has a single gate, with a drain-source breakdown voltage (VDSS) of 100V. This MOSFET\'s high voltage rating, combined with its low on-resistance, offers high power density and efficiency. Making it suitable for a wide range of applications.

The IXFN44N100P is useful in a variety of applications, including motor control and power conversion, high-speed switching, and RF switching and amplifiers. With its low on-resistance, it can reduce power loss on switching applications, while its high voltage rating makes it suitable for use in automotive and industrial applications. Due to its high speed switching, it is suitable for use in high-speed communication systems, such as medical imaging, telecommunication, automotive electronics, and routers.

The IXFN44N100P uses the “Enhancement Mode” of operation, which is also known as the “Envelope” mode. In this mode, the transistor can switch from an “off” to an “on” state when the gate-source voltage (VGS) increases above the threshold voltage (VTH). This occurs when enough current is passed through the gate, creating a field-effect. This field-effect separates the drain-source voltage (VDS), and the transistor begins to conduct from the source to the drain, allowing current to flow in the “on” direction. At VGW equal to VTH, the majority carriers are driven away from the channel and the depletion layer is reduced, thus allowing electrons to flow.

The IXFN44N100P has a low gate-drain capacitance (Cgd) of 33pF. This allows for precise control of the turn-off time. With its low gate-drain capacitance, it can provide a fast switching time, allowing precise and accurate control. In addition, it has a threshold voltage of 2.5V, a breakdown voltage of 100V, an on-resistance of 0.011Ohms, an operating and storage temperature range of -55 to +175℃, and an on-resistor temperature coefficient of 25%/℃.

The IXFN44N100P is an ideal transistor for high-speed switching and high power applications. Due to its low on-resistance and high voltage rating, it can reduce power loss on switching applications while also providing reliable performance in automotive and industrial applications. In addition, its low gate-drain capacitance allows for precise control of the turn-off time, and its threshold voltage makes it suitable for use in a wide range of applications.