IXFN48N60P Allicdata Electronics
Allicdata Part #:

IXFN48N60P-ND

Manufacturer Part#:

IXFN48N60P

Price: $ 12.97
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 40A SOT-227
More Detail: N-Channel 600V 40A (Tc) 625W (Tc) Chassis Mount SO...
DataSheet: IXFN48N60P datasheetIXFN48N60P Datasheet/PDF
Quantity: 1000
10 +: $ 11.79490
Stock 1000Can Ship Immediately
$ 12.97
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8860pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: PolarHV™
Rds On (Max) @ Id, Vgs: 140 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFN48N60P is a 60V single N-channel enhancement mode Field-Effect Transistor (FET) that is produced using Fairchild Semiconductor\'s advanced PowerTrench® process. The technology used to manufacture IXFN48N60P is designed with a goal of having the device achieve low RDS(on), low gate charge and enhance switching performance. In addition to its advanced technology, integrated 100V fast body diode and temperature rating of 175°C make the IXFN48N60P suitable for many power management and switch mode applications.

The working self-body diode of the IXFN48N60P is the shared feature which has been attributed to the efficiency, high operation speed and less power loss of the device. It also reduces the total thermal stress of the device and efficiently dissipates power. In addition to low RDS(on) and low gate charge, the IXFN48N60P also operates with a low ESD rating of 2 kV and high current capability of 42A. This device is also RoHS compliant due to its lead-free construction, which makes it an ideal solution for chemical-resistant applications with minimal environmental impact.

Overall, the IXFN48N60P is optimized for power management, motor control, and switch mode applications where high efficiency, high reliability and low losses are desired. Its efficient self-body diode reduces gate drive current, gate charge and total gate charge, providing a high-performance solution at a decreased cost. In applications that require high frequency switching such as DC-DC converters and switching regulators, IXFN48N60P exhibits excellent performance. Its RoHS compliant construction and temperature rating of 175°C further reinforces its suitability for a variety of demanding applications.

In summary, IXFN48N60P is an ideal component for power applications that require low RDS(on), low gate charge, high current, and fast switching speeds. Its integrated self-body diode reduces power dissipation, reduce thermal stress and total cost of components, making it an ideal choice for power applications such as DC-DC converters and switching regulators. Customers will benefit from the IXFN48N60P\'s integrated 100V fast body diode, rohs stiffness, and temperature rating of 175°C.

The specific data is subject to PDF, and the above content is for reference

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