
Allicdata Part #: | IXFN220N20X3-ND |
Manufacturer Part#: |
IXFN220N20X3 |
Price: | $ 20.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 200V/160A ULTRA JUNCTION X3-CLAS |
More Detail: | N-Channel 200V 160A (Tc) 390W (Tc) Chassis Mount S... |
DataSheet: | ![]() |
Quantity: | 10 |
1 +: | $ 18.22590 |
10 +: | $ 16.86130 |
100 +: | $ 14.40050 |
Gate Charge (Qg) (Max) @ Vgs: | 204nC @ 10V |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 390W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 110A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IXFN220N20X3 is a model of Field Effect Transistor (FET) that belongs to the single category. FETs are operating on the principle of the “effect” of an electric field on the flow of electrons, meaning that the electrical field created by the voltage is controlling the flow of electric current in the FET itself. This device can be used in a broad range of applications and projects, thanks to its sturdy and reliable operation. Below, we will explore the IXFN220N20X3 application field and working principle in more detail.
Applications
The IXFN220N20X3 is a commonly used model of FET, due to its versatility, quality and price. It is used for a variety of applications, including:
- High-frequency switching;
- Bump circuits;
- Current boosting applications;
- Diode clamping;
- Power supply circuits;
- Light dimmers;
- Automotive circuits;
- Motor control circuits.
This FET is also a commonly used model in energy-saving technologies, such as LED lamps and solar-powered applications. The IXFN220N20X3 is a robust and reliable component, built from quality materials and capable of withstanding both high temperatures and extreme environmental conditions.
Technical specs and working principles
This FET device comes with a maximum voltage of +/- 20Vdc and a maximum wattage of 10W. It has good switching characteristics and a low forward voltage drop, making it ideal for a variety of applications. The IXFN220N20X3 is also a relatively low-noise device, capable of emitting minimal electric interference.
It works on the principle of the “field effect” – the electrical field is controlling the number of electrons that are flowing within the FET device. This translates into a modular current regulation, which is why FETs are often preferred over standard transistors. The IXFN220N20X3 also has an impressive speed – it can be switched on and off in a fraction of a second.
Conclusion
In conclusion, the IXFN220N20X3 is a widely used FET device, suitable for a number of applications and projects. It works on the principle of the “effect” of an electric field on the flow of electrons, allowing for a modular current regulation. Thanks to its robust construction, versatility and quality, the IXFN220N20X3 is a preferred model for a range of applications and projects.
The specific data is subject to PDF, and the above content is for reference
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