IXFN34N100 Allicdata Electronics
Allicdata Part #:

IXFN34N100-ND

Manufacturer Part#:

IXFN34N100

Price: $ 29.91
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 34A SOT-227B
More Detail: N-Channel 1000V 34A (Tc) 700W (Tc) Chassis Mount S...
DataSheet: IXFN34N100 datasheetIXFN34N100 Datasheet/PDF
Quantity: 1000
10 +: $ 27.19330
Stock 1000Can Ship Immediately
$ 29.91
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 280 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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As an important component in integrated circuits, IXFN34N100 is a special kind of field effect transistor (FET). This type of power switch can be used in a variety of applications, from telecommunications and industrial electronics systems to consumer applications such as automotive electronics and consumer appliances.

IXFN34N100 is a single off-state power MOSFET, or metal-oxide-semiconductor FET, which is commonly used for voltage regulation, signal switching, and signal conditioning. The technology employed in IXFN34N100 is based on the same principles that are used in power MOSFETs, using a MOSFET structure with a silicon carbide substrate.

IXFN34N100 can offer very low on-state resistance and superior thermal performance, which makes it an ideal choice for power switching applications. The operation of IXFN34N100 is based on the principle of gate voltage controlling the flow of current through the device. When a positive voltage is applied to the gate terminal, the depletion layer between the gate and the source is enhanced, decreasing the resistance between the source and drain.

This decrease of resistance allows more source current to flow through the MOSFET, which results in a higher current gain. The gate of the device can be connected to a voltage source, and the drain can be connected to a load, allowing the device to be used as a switch to control the flow of current. This makes it ideal for use in switching applications.

In addition to its use in switching applications, IXFN34N100 also has applications in voltage regulation. When a voltage difference is applied across the gate and the source, the device can act as a resistor, limiting the voltage that can flow between the source and the drain. This can be used to create voltage regulators that can be used to maintain a certain level of voltage between the source and the drain. This makes it an ideal choice for use in power supply applications where voltage regulation is important.

IXFN34N100 is also a popular choice for use in motor control applications. The device can be used to control the speed of the motor, as well as the direction in which it rotates. This makes it an ideal choice for use in robotic control systems and other industrial applications. The device can also be used to control the rate of voltage, allowing more precise control over the speed of the motor.

Overall, IXFN34N100 is an excellent choice for a variety of applications. Its low on-state resistance and superior thermal performance make it an ideal choice for power switching applications, and its ability to function as a voltage regulator make it a great choice for power supply and motor control applications. It is a versatile device that can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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