IXFN420N10T

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The IXFN420N10T is a single N-channel enhancement-mode, field-effect transistor (FET). This transistor is mainly used in power control and switching applications, where low control signals can switch large currents in the channel of the FET. The IXFN420N10T is also ideal for rapid switching, low-noise amplifier and voltage-controlled phase-shifter circuits. It is all due to the transistor’s outstanding high-frequency performance, low capacitance and on-resistance.

This transistor is designed to achieve high power density without compromising power handling, high switching frequency and high linearity. Its high power handling capability is due to its low on-resistance and high voltage rating. Its switching frequency is high, allowing for a more dynamic response time in the circuit. The transistor also has excellent linearity, making it a great choice for applications where low noise and precision are important.

The IXFN420N10T has a source-drain voltage rating of 40 V, a gate-source voltage of ±20V, a drain current of 3.2A, a drain-source on-resistance of 420mΩ, and a capacitance of 20pF. It operates over a temperature range of -55 to +150°C, making it suitable for use in a wide range of environments. The transistor can also be used in a variety of applications, including power MOSFETs, analog circuits, high-speed switching and amplification.

The working principle of the IXFN420N10T is based on the gate-controlled over-riding of the source-drain junction of the transistor. When the gate terminal is given a positive voltage, the transistor’s source-drain junction is forward-biased and the transistor is turned on. Conversely, when the gate voltage is given a negative voltage, the source-drain junction is reversed-biased and the transistor is turned off. Thus, by manipulating the gate-source voltage, the current flowing through the transistor can be accurately controlled.

The IXFN420N10T can be used in a variety of applications, such as power control and switching applications, due to its outstanding power handling, high switching frequency and excellent linearity. It is also an ideal choice for rapidly switching, low-noise amplifier and voltage-controlled phase-shifter circuits. This transistor is a versatile device, capable of withstanding extreme temperatures, making it suitable for use in a wide range of environments.

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