
Allicdata Part #: | IXFN520N075T2-ND |
Manufacturer Part#: |
IXFN520N075T2 |
Price: | $ 16.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 480A SOT227 |
More Detail: | N-Channel 75V 480A (Tc) 940W (Tc) Chassis Mount SO... |
DataSheet: | ![]() |
Quantity: | 833 |
1 +: | $ 15.24600 |
10 +: | $ 14.10250 |
25 +: | $ 12.95910 |
100 +: | $ 12.04430 |
250 +: | $ 11.05330 |
500 +: | $ 10.51970 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 940W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 41000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 545nC @ 10V |
Series: | GigaMOS™, HiperFET™, TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 480A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFN520N075T2 is a type of insulated-gate field effect transistor (IGFET). It is commonly known as MOSFET, which stands for metal-oxide-semiconductor field-effect transistor, and is a very common type of transistor. It is used in a variety of applications, including amplifiers and power switches in electronic circuits. The IXFN520N075T2 is a high-performance semiconductor device with low on-resistance and low gate charge. It is designed for switching and high-frequency applications, such as in small signal circuits, motor and motor control circuits, and high-density circuits.
The IXFN520N075T2 is a single insulated-gate field-effect transistor. It is a four-terminal device fabricated with advanced CMOS (complementary metal-oxide semiconductor) technology. It has a drain, a source, a control gate, and a body (or substrate). The drain, source, and body are all connected to the substrate, and the control gate is insulated from the substrate by a thin oxide layer. It is a three-terminal device, with the drain and source being the two external terminals, and the gate being the internal terminal. The drain and source terminals are connected to a load (e.g. a resistor or capacitor) to complete the circuit, and the gate terminal is connected to a voltage source, such as a battery, to control the flow of electricity in the device.
The IXFN520N075T2 operates in two modes: the static mode and the dynamic mode. In static mode, the gate voltage is maintained at a constant value, and the current flowing through the device is controlled by the gate voltage. In dynamic mode the current flowing through the device is controlled by both the gate voltage and the drain-to-source voltage. When the drain-to-source voltage is low, the current is limited by the gate voltage; when the drain-to-source voltage is high, the current is limited by the drain-to-source voltage.
The IXFN520N075T2 is a power MOSFET, meaning it is designed to handle high power levels and operate with low on-resistance. It has a low gate charge, meaning that it takes only a small amount of energy to turn the device on and off. As a result, it is well-suited for high-speed switching applications. In addition, it has a high transconductance, meaning it can amplify input signals with a relatively high efficiency.
The IXFN520N075T2 is used in a variety of applications, such as audio amplifiers, power switches, motor controllers, modems and communication equipment, and automotive electronics. In audio amplifiers, it is used as the input device for signal amplification. In motor controllers, it is used as a power switch to control the power supply to the motor. In modems, it is used as a high-speed switch to control the flow of data. In automotive electronics, it is used to control power supplies, switches, and other circuit elements.
The IXFN520N075T2 is an important and versatile device that is widely used in various applications. It is a reliable and efficient device with high power handling capability and low on-resistance. It is designed for switching and high-frequency applications, and is commonly used for amplifying signals, controlling motors, and providing data control in communication and automotive equipment.
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