IXFN66N85X

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The IXFN66N85X is a field-effect transistor (FET) from IXYS Semiconductor. It is a vertical double diffused MOSFET (VDMOS) that carries a 15-amp continuous drain current (ID) capable of 45-amp pulsed capability more than the existing IXFN66N85X. It features very low on-state resistance (RON) at 175 mΩ, peak gate charge (Qg) at 10 μC, positive temperature coefficient (PTC) self-protection, saturation voltage (VCE(sat)) at 3.2V, and operating junction temperature (Tj) up to 175℃. This FET is an ideal choice to use as a solid-state switch in inductive load switching such as motor drives and other high power switching applications.

The IXFN66N85X is a n-channel FET that has a drain-source voltage (VDS) of 400V, drain-source on-resistance (RDS(on)) of 175 mΩ, maximum drain current (ID) of 15A, and gate threshold voltage (VGS) of 2.5V. It also has a drain-source avalanche energy (EAS) of 47.4mJ and a breakdown voltage (BVDSS) of 600V. In terms of its physical characteristics, this FET has a total power dissipation (PD) of 140W, isolating voltage (VISO) of 5KV, and a package type of TO-262.

The working principle of the IXFN66N85X is based on the idea of the field effect found in MOSFETs. A MOSFET works by controlling the flow of charge carriers between the source and drain terminals. The gate terminal is connected to the semiconductor surface, which controls the depletion of the gate electrode and hence the flow of charge carriers. When a gate voltage is applied, the electron barrier between the source and the drain terminal changes and a current flows between the terminals allowing it to act as a switch.

The IXFN66N85X is a highly efficient FET that is suitable for a variety of applications. It is used extensively in motor drives and other high power switching applications. It can also be utilized in DC-DC converter circuits and in industrial applications. Additionally, due to its low on-state resistance, this MOSFET is also suitable to be used in low-voltage applications such as computer peripherals, server and embedded applications. It is also used in power inverters and solar panel control applications.

The IXFN66N85X is a popular FET that has been widely used in various applications. Its low on-state resistance, high ID, and high breakdown voltage make it an ideal choice for high power switching applications. In addition, its low gate charge and positive temperature coefficient self-protection make it an efficient and reliable switch.

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