IXFX30N100Q2 Allicdata Electronics
Allicdata Part #:

IXFX30N100Q2-ND

Manufacturer Part#:

IXFX30N100Q2

Price: $ 23.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 30A PLUS247
More Detail: N-Channel 1000V 30A (Tc) 735W (Tc) Through Hole PL...
DataSheet: IXFX30N100Q2 datasheetIXFX30N100Q2 Datasheet/PDF
Quantity: 1000
30 +: $ 20.90110
Stock 1000Can Ship Immediately
$ 23
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 735W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFX30N100Q2 is a power MOSFET (metal–oxide–semiconductor field-effect transistor) that is similar to other MOSFETs but includes a unique feature—it has an integrated “gate driver”, which is used to control the gate bias voltage. This allows it to be used in a wide variety of applications, such as power switching, motor control, and switching power supplies.

Power MOSFETs are specialized semiconductor devices that are designed to switch higher power levels. They are extremely efficient, but require careful bias voltage and gate control in order for them to work properly. A traditional MOSFET requires an external gate driver to control the gate bias voltage, but the IXFX30N100Q2 obviates the need for this by integrating a gate driver into the MOSFET itself.

The IXFX30N100Q2’s gate driver allows it to operate from 10 to 100 volts and output up to 30 Amps of power. With its integrated gate driver, the IXFX30N100Q2 can be used in a variety of applications, including power switches, motor control, switching power supplies, and even in portable applications such as USB chargers.

In addition to its integrated gate driver, the IXFX30N100Q2 has a number of other features that make it a great choice for higher power applications. It has a wide range of gate-source voltages (from 10V to ±25V), a low gate capacitance (5pF), and a maximum drain-source voltage of 100V. It is also a low-threshold device, meaning it has a low turn-on voltage, which makes it well-suited for applications that require rapid switching times.

The IXFX30N100Q2’s working principle is simple: it uses an electric field to control the current flow between two terminals. When a positive voltage is applied to the gate terminal, an electric field is created, which attracts electrons and makes the MOSFET conductive. This allows current to flow between the drain and source terminals. When the gate voltage is reduced, the electric field is reduced and the MOSFET switches off.

The IXFX30N100Q2 is a versatile device with a variety of applications. It is an ideal choice for applications that require a high power output and a low switching time. With its integrated gate driver and wide range of voltage ratings, it makes an excellent choice for powering systems like motor control and switching power supplies. It is also a great choice for portable applications, such as USB chargers.

The specific data is subject to PDF, and the above content is for reference

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