IXFX80N60P3 Allicdata Electronics
Allicdata Part #:

IXFX80N60P3-ND

Manufacturer Part#:

IXFX80N60P3

Price: $ 8.29
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 80A PLUS247
More Detail: N-Channel 600V 80A (Tc) 1300W (Tc) Through Hole PL...
DataSheet: IXFX80N60P3 datasheetIXFX80N60P3 Datasheet/PDF
Quantity: 1000
30 +: $ 7.53270
Stock 1000Can Ship Immediately
$ 8.29
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFX80N60P3 is a field-effect transistor (FET) manufactured by IXYS Corporation, offering excellent performance and reliability in many demanding applications. This FET has the benefit of being able to operate at a maximum temperature of 155°C – making it suitable for use in high-temperature conditions. It also has a high breakdown voltage, which makes it suitable for high voltage control or protection circuits.

This transistor is a power MOSFET, meaning it is capable of providing high-power operation in small packages. It is designed to provide high performance at switching frequencies up to 1 MHz and is also designed to reduce switching losses. The IXFX80N60P3 has a low on-resistance of 0.012 Ω and a high breakdown voltage of 600V, making it suitable for use in high-frequency applications.

The IXFX80N60P3 is a single FET, meaning it consists of a single channel of switching. In other words, the FET has two states – on and off. When the FET is in the “on” state, current flows freely from the gate to the source. Conversely, when the FET is in the “off” state, no current can flow from the gate to the source.

The FET is designed to work at a supply voltage of 80 volts, making it suitable for medium-voltage applications. In addition, this FET has a low gate charge of 10nC, meaning it switches very quickly, making it highly efficient in switching applications.

The IXFX80N60P3 is highly suitable for use in a variety of applications, such as switching, power conversion and motor control. This FET can be used in DC-DC converters, motor controllers and inverters, as well as other switching circuits. Additionally, this FET can be used in high-voltage protection circuits, due to its high breakdown voltage.

The IXFX80N60P3 is constructed using advanced technology, which makes it reliable and efficient. The FET has a low gate threshold voltage, meaning it can operate at a wide range of temperature (from -55°C to +155°C). This makes it suitable for use in extreme temperature applications.

In summary, the IXFX80N60P3 is a single FET that is suitable for high-power applications, providing an excellent combination of performance, reliability, and efficiency. It is capable of switching up to 1 MHz and provides low resistance, making it suitable for high-frequency applications. Additionally, this FET can operate at a wide range of temperature, making it suitable for use in extreme temperature applications, such as DC-DC converters, motor controllers and inverters.

The specific data is subject to PDF, and the above content is for reference

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