IXFX55N50

Vgs(th) (Max) @ Id:	4.5V @ 8mA
Package / Case:	TO-247-3
Supplier Device Package:	PLUS247™-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	625W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	330nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	80 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFX55N50 application field and working principle

The IXFX55N50 is a power field effect transistor (FET) device with superior performance featured by IXYS Corporation. This FET is especially useful in circuit applications that require high-speed switching, fast turn off and low on-resistance as well as low gate charge. IXFX55N50 can be applied to a wide range of applications from stationary power supply, lighting and automotive electronics to telecommunication and computing equipment systems. This article will focus on the application fields and working principle of IXFX55N50.

Applications of IXFX55N50

The IXFX55N50 power FET is designed to deliver a current of up to 55A and a voltage of up to 50V. This makes it suitable for implementing switching applications such as relay drives, motor control, and AC power conversion. It is also used in applications where low on-resistance and fast switching are required such as digital switching and power switching stages. Furthermore, the IXFX55N50 is also used in applications such as inrush current limitation, piezoelectric power supplies, motor control systems, and power supply.

Working Principle of IXFX55N50

The IXFX55N50 power FET is a single N-Channel MOSFET device. This device is made up of a MOSFET with a built-in diode. The MOSFET is a voltage-controlled device that allows current to flow when the voltage applied to its gate is higher than the drain-to-source voltage. The built-in diode is a semiconductor device that conducts in one direction, allowing current to be switched from the source to the drain. The gate voltage controls the on-resistance of the FET. When the gate voltage is increased, the MOSFET will be turned on more easily, allowing more current to flow from the source to the drain.When the gate voltage is decreased, the MOSFET will be turned off, limiting the flow of current. This is known as “body diode conduction” and is a common feature of power FETs. The IXFX55N50 also has a built-in over-voltage protection feature, allowing the device to be protected against high voltages, thus improving its reliability.

Conclusion

The IXFX55N50 power field effect transistor is a reliable and versatile device that can be used in a variety of applications such as relay drives, motor control, AC power conversion, digital switching, and power switching stages. It has superior performance characteristics, including low on-resistance, fast switching speed, and a built-in over-voltage protection feature. Its working principle involves the use of a MOSFET with a built-in diode to control on-resistance and body diode conduction. The IXFX55N50 is a great choice for a wide range of applications.

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