| Allicdata Part #: | IXFX44N50Q-ND |
| Manufacturer Part#: |
IXFX44N50Q |
| Price: | $ 11.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 44A PLUS247 |
| More Detail: | N-Channel 500V 44A (Tc) 500W (Tc) Through Hole PLU... |
| DataSheet: |  IXFX44N50Q Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 10.19990 |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | PLUS247™-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 22A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFX44N50Q is a high performance HEXFET power MOSFET that is frequently used in a variety of applications. It is a Voltage-Mode Field Effect Transistor (FET) manufactured by International Rectifier and is part of their Metal Oxide Semiconductor FETs (MOSFETs). This type of FET is a single transistor device with a high input impedance, allowing it to be used in voltage-controlled applications.
The IXFX44N50Q is designed to operate with a drain to source voltage up to 44 volts, a drain current of 50 amperes, and a drain to source on-state resistance of 0.08 Ohms. It is commonly used in a variety of applications, including power supplies, motor control circuits, and various high power applications. The IXFX44N50Q is also frequently used in switching power amplifier circuits.
The working principle of the IXFX44N50Q is based on the field effect. A voltage is applied to the gate of the device, which creates an electric field across the gate oxide layer beneath it. This electric field modulates the resistance of the channel between the source and drain of the device. This is how the device controls the flow of current from its drain to its source.
In addition to the field effect, the IXFX44N50Q also utilises avalanche breakdown protection. This feature helps to protect the device from potential electrostatic discharges, reducing the chances of it failing or becoming damaged. It also helps to reduce noise and improve efficiency by allowing the device to switch faster.
The IXFX44N50Q is a versatile and powerful FET that is well suited to a wide variety of applications due to its low resistance and high input impedance. Because of its high speed switching, it is also very useful for switching power amplifier circuits, as well as motor control circuits. By increasing its gate voltage, the IXFX44N50Q can be used to produce high switching frequencies, making it suitable for even more applications. The device is also protected against electrostatic discharges by its avalanche breakdown protection feature, making it highly reliable.
The specific data is subject to PDF, and the above content is for reference
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