IXFX200N10P

Series:	HiPerFET™, PolarP2™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:	235nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7600pF @ 25V
FET Feature:	--
Power Dissipation (Max):	830W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PLUS247™-3
Package / Case:	TO-247-3

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IXFX200N10P – Application Field and Working PrincipleThe IXFX200N10P is a part of the IXFN family of N-Channel mosfets from IXYS Corporation. This particular device is designed for low voltage and low gate charge applications and is suited for both synchronous and asynchronous circuits. The IXFX200N10P is a high speed, low on-resistance device with a very low input capacitance of only 26pF and a maximum drain-source on-resistance of 200mΩ. This makes it an ideal choice for low noise power conversion and switching applications.The IXFX200N10P is a field-effect transistor (FET) which uses a gate to control current conduction through the device. Unlike bipolar transistors, the gate connection is isolated and cannot pass current. FETs are divided into two main categories: n-channel and p-channel. The IXFX200N10P is an n-channel device, meaning that it is composed of n-type semiconductor material - meaning that it is composed of regions which have an abundance of electrons.An N-channel MOSFET works by placing a voltage between the source and the gate. If a negative voltage is applied, the negative charge carriers, or electrons, are attracted to the positive charge on the gate, creating an electrical field in the channel. This field blocks electrons from entering the channel and the MOSFET is ‘off’. If a positive voltage is applied to the gate, the opposite occurs and electrons are allowed to flow freely through the channel. This is the ‘on’ state and conduction through the channel begins. By varying the voltage applied to the gate, the MOSFET can be used in a variety of applications as a switch or as a variable resistor. The IXFX200N10P is rated for 12V to be applied between the drain and source and has a maximum current of 10A. Its maximum drain-source on-resistance is 200mΩ and is suitable for operations up to a frequency of 20MHz. It has an operating temperature range of -55°C to +175°C and a junction-to-case thermal resistance at 25°C of 8.5°C/W. It comes in a PG-TO220 package and is RoHS compliant.The IXFX200N10P is used in a variety of applications, including motor control, power conversion, motor speed control, industrial power supplies, UPSs, and DC-DC converters. This MOSFET is designed for low voltage and low gate charge applications, meaning that it is suitable for both synchronous and asynchronous circuits. Its low input capacitance also makes it an ideal choice for low noise power conversion and switching applications.In summary, the IXFX200N10P is a high speed, low on-resistance N-Channel MOSFET which is perfect for power conversion and switching applications. Its low gate charge and low input capacitance make it suitable for both synchronous and asynchronous applications, while its low drain-source on-resistance allow it to operate at frequencies up to 20MHz without sacrificing performance. With its 12V to 30V operation range, the IXFX200N10P is a versatile and powerful device suitable for a wide range of applications.

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