IXFX64N60P3

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The IXFX64N60P3 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is part of the IXF Series of complimentary pair MOSFETs manufactured by IXYS Corporation. This particular model is designed for operation in the lower input voltage range of 8 V to 75 V and features a very low threshold voltage of 1.8 V and maximum drain source voltage of 600 V. This makes it ideal for many applications, from light inrush current supplies to medium to high voltage switching applications.

The IXFX64N60P3 is ideal for use as a high-side switch in many systems because it has a very high RDS on-resistance of 64 mOhms and exhibits very low-saturation voltage. Due to its highly efficient design, the IXFX64N60P3 is well suited for use in voltage suppression, reverse polarity protection, and load switching applications. It is also very popular in audio and video systems, as it can support high currents while still maintaining high efficiency.

The working principle of the IXFX64N60P3 is based on capacitance-coupled field-effect transistor (FET) technology. In this type of transistor, a thin film of MOSFET is overlaid on a substrate. This substrate is then charged with a voltage, which causes an electric field to be created between the source and drain of the transistor. The electric field will affect the conductivity of the MOSFET in direct proportion to the source voltage. If the voltage is increased the resistance between the source and drain will decrease, thus allowing more current to flow.

The IXFX64N60P3 is also equipped with several features such as IGBT (Insulated Gate Bipolar Transistor) gate drive circuits, gate resistors, gate-source capacitance and total gate-source capacitance value to reduce switching losses and improve operating efficiency. A built-in thermal shutdown feature is also provided to protect the device from overheating. This feature can be triggered either when the power dissipated by the device exceeds the specified limit or when the temperature inside the transistor exceeds the maximum junction temperature.

In summary, the IXFX64N60P3 is a versatile and powerful MOSFET that can be used in a wide variety of applications. Its low threshold voltage, high RDS on-resistance, and low-saturation voltage make it an ideal choice for applications such as power supplies, motor controls, and high-current switching applications. The built-in features such as IGBT gate drive circuits, gate resistors, gate-source capacitance, and thermal shutdown ensure that the IXFX64N60P3 will operate efficiently and safely in any application.

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