Allicdata Part #: | IXFX260N17T-ND |
Manufacturer Part#: |
IXFX260N17T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 170V 260A PLUS247 |
More Detail: | N-Channel 170V 260A (Tc) 1670W (Tc) Through Hole P... |
DataSheet: | IXFX260N17T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1670W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 400nC @ 10V |
Series: | GigaMOS™ |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 260A (Tc) |
Drain to Source Voltage (Vdss): | 170V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFX260N17T is a unique type of transistor technology, known as a High Voltage Field-Effect Transistor (HVFET). As its name implies, it is a type of transistor that applies a high voltage across its internal junctions in order to generate a voltage output. It is also known as an insulated-gate bipolar transistor (IGBT).
The IXFX260N17T is a low-power device, meaning it is typically used in low-voltage, low-current applications. It is ideal for power control and switching applications. It is also suitable for applications involving high-speed logic, such as logic gates and flip-flops. Further, it can be used in motor control, current control, and high-frequency switching.
The IXFX260N17T is composed of several components. At its core is a junction field-effect transistor (JFET). The JFET consists of source and drain terminals, a gate, and a substrate. The gate terminal is typically insulated from the source and drain, hence its name. The substrate consists of an N-type semiconductor material and can be connected (“shunted”) to ground for protection or to an external power source. Above the JFET is an additional component called an insulated gate bipolar transistor (IGBT), which is used to enable higher voltage and current ratings than possible with a standard JFET.
The operation of the IXFX260N17T is simple. When a voltage is applied to the gate terminal, it creates an electric field that affects the current flow between the source and drain terminals. This is referred to as the channel length, and is determined by the voltage applied to the gate. As the voltage is increased, the current can be controlled up and down with accuracy. This type of transistor is often used in motor control, voltage and current control, and high-frequency switching applications.
The advantages of using an IXFX260N17T are numerous. It is a low-power device, which means it can be used in a wide range of applications and can draw less power than other types of transistors. It can also handle high voltages with relatively low on-resistance, which is important for applications such as motor control. Lastly, it is relatively easy to use, since all that’s required is a voltage applied to the gate terminal for the current to be controlled.
The IXFX260N17T is a versatile and reliable transistor technology, suitable for a wide range of applications and environments. With its low power requirements and high voltage capabilities, it is an ideal choice for high-speed logic and power control applications. For applications involving current control, motor control, and switching, the IXFX260N17T can provide an efficient and reliable solution.
The specific data is subject to PDF, and the above content is for reference
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