![IXFX98N50P3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IXFX98N50P3-ND |
Manufacturer Part#: |
IXFX98N50P3 |
Price: | $ 9.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 98A PLUS247 |
More Detail: | N-Channel 500V 98A (Tc) 1300W (Tc) Through Hole PL... |
DataSheet: | ![]() |
Quantity: | 180 |
1 +: | $ 8.95860 |
30 +: | $ 7.53270 |
120 +: | $ 6.92187 |
510 +: | $ 5.90395 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 197nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 98A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFX98N50P3 is a major current precision field-effect transistor (FET) product manufactured by Infineon Technologies. This type of FET is a high-voltage, low-voltage MOSFET (metal-oxide-semiconductor field-effect transistor). The IXFX98N50P3 has a maximum DC drain current rating of 98A, a voltage rating of 50V and a power rating of 160W.
A major use of the IXFX98N50P3 is for power applications in computing, communications, audio and video equipment, and other applications in which a precise control of both the current and voltage are essential. Due to its versatile design and its low on-resistance values, it finds use in a wide variety of power-related applications such as switch-mode power supplies, high-frequency power converters, motor drives, and other power-intensive applications. Moreover, because of its low gate-source capacitance, the IXFX98N50P3 can also be used in high-frequency switching applications such as data converters and telecom systems.
The working principle of the IXFX98N50P3 is similar to that of any other FET. In brief, it uses a gate electrode to control an electrostatic field between the source and drain regions. This gate electrode is in the form of an insulated-gate, which is separated from the primary channel region by a thin layer of insulating material. When a voltage is applied to the gate, this creates an electric field across the insulating layer, which opens up a pathway between the source and drain regions. This allows electrical current to flow between the source and drain regions, thus allowing current to be controlled by changing the gate voltage.
In addition to its use in power applications, the IXFX98N50P3 is also used in signal processing applications. Its low input capacitance makes it an ideal choice for high-frequency switching circuitry, allowing it to switch signals with very little distortion and noise. This makes it especially useful in communications and audio-video equipment, where signal integrity is essential.
Because of its high-voltage, low-voltage design, the IXFX98N50P3 is both highly efficient and cost-effective. It provides a reliable, cost-effective solution for a variety of applications that require accurate current and voltage control. So, if your power-application needs require precise electrical current control, then the IXFX98N50P3 is a great choice.
The specific data is subject to PDF, and the above content is for reference
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