Allicdata Part #: | IXFX210N17T-ND |
Manufacturer Part#: |
IXFX210N17T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 170V 210A PLUS247 |
More Detail: | N-Channel 170V 210A (Tc) 1150W (Tc) Through Hole P... |
DataSheet: | IXFX210N17T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 18800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 285nC @ 10V |
Series: | GigaMOS™ |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 210A (Tc) |
Drain to Source Voltage (Vdss): | 170V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFX210N17T is an insulated-gate field effect transistor, also known as an IGFET, with a characteristic source-drain voltage rating of 200 volts. Benefiting from its insulation gate, this transistor has multiple uses in several industrial applications. This article looks closely at the IXFX210N17T, exploring its application field and its working principle.
Applications of the IXFX210N17T
The IXFX210N17T is used across a range of industries, thanks to its features. Firstly, it has a low on-state resistance, meaning that it can transfer more power than other transistors. Additionally, it is highly reliable. This makes it ideal for use in power control applications, where it can be used to precisely control large currents. Furthermore, the IXFX210N17T has a very low input capacitance, making it useful in high frequency circuits.
A number of power machines use the IXFX210N17T, including switching power supplies and solar inverters. Additionally, it is used in DC brushless motor control, LED lighting and various communications devices such as mobile phones and computers. Its low on-state resistance also means that it can be used in automotive electronics for power control applications.
Working Principle of the IXFX210N17T
The IXFX210N17T follows the same working principle as other insulated-gate transistors. It is a three-terminal semiconductor device, consisting of a gate, a source and a drain. The gate electrode is insulated from the source and drain, hence the name. An input voltage is applied to the gate, and this causes an electric field between the gate and the source-drain region. This field in turn causes a conductive channel to form between the source and drain.
The size of the conductive channel – i.e. the amount of current which can flow between the source and drain – is dependent on the voltage applied to the gate. This is known as voltage-controlled current conduction. If the voltage applied to the gate is large enough, then the channel opens and current will flow freely. If the voltage is reduced, then the channel closes and current cannot flow.
By controlling the applied voltage, it is possible to control the amount of current flowing between the source and drain. This is known as Voltage Source Control, which makes the IXFX210N17T ideal for use in power control applications. This is why it is widely used in switching power supplies, solar inverters and DC brushless motor control.
Conclusion
In conclusion, the IXFX210N17T is an insulated-gate transistor which is widely used in many industrial applications. It has a low on-state resistance and very low input capacitance, making it ideal for power control applications and in high frequency circuits. Its working principle is based on voltage-controlled current conduction, allowing precise control of the amount of current flowing between the source and drain.
The specific data is subject to PDF, and the above content is for reference
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