Allicdata Part #: | IXFX20N80Q-ND |
Manufacturer Part#: |
IXFX20N80Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 20A PLUS247-3 |
More Detail: | N-Channel 800V 20A (Tc) 360W (Tc) Through Hole PLU... |
DataSheet: | IXFX20N80Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HiPerFET™ |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
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IXFX20N80Q is a Field Effect Transistor, also known as FET, which is especially a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is a voltage-controlled semiconductor device that is used as a switch or an amplifier to provide electrical pathways between two independent circuits. IXFX20N80Q is a single FET and has a drain-source (D-S) rating of 800 V, a drain-gate (D-G) rating of 200 V, and a maximum drain current of 20 A. Furthermore, it has a 20 mΩ maximum on-resistance at 10 V drain-gate voltage, a logic-level gate threshold voltage of 3.0 V, and it comes in an 8-pin insulated power package.
IXFX20N80Q is suitable for medium-load switching applications, including DC or low-frequency AC switching, and is perfect for applications in medium- to high-power limiting circuits. It commonly finds applications in industrial control and power electronics, automotive applications, CRT and TV displays, telecom power supplies, and mobile phones switching. Moreover, it features very low on-resistance and is extremely reliable, making it suitable for a variety of applications. Additionally, it comes in a wide range of packages to meet customer requirements.
The working principle of the IXFX20N80Q is relatively simple. It is made of a source, a drain, and a gate. The source is used to provide negative charge to the channel, and the drain is used for the output. When the gate voltage is applied, this causes a channel to form between the source and the drain, thus allowing current to flow from the source to the drain. The devices used in the IXFX20N80Q are insulators and dielectrics, which have the ability to induce a field in the channel when a voltage is applied.
When a voltage is applied, the channel widens, resulting in the electrons flowing more easily. This is known as the ‘on’ state of the MOSFET. On the other hand, when no voltage is applied, the channel gets narrower, limiting the flow of electrons to a minimum. This is known as the ‘off’ state of the MOSFET. Thus, by controlling the voltage applied to the gate, the device can be switched on or off as needed.
In conclusion, IXFX20N80Q is a single MOSFET device that is used as a switch or an amplifier in a wide variety of applications such as industrial control and power electronics, telecom power supplies, and mobile phones switching. It operates by controlling the voltage applied to the gate, hence controlling the flow of electrons in the channel, thus allowing it to be switched on or off as needed. Furthermore, its low on-resistance and reliability make it suitable for various applications.
The specific data is subject to PDF, and the above content is for reference
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