IXFX120N20

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The IXFX120N20 is a type of insulated gate field effect transistor (IGFET), or metal oxide semiconductor field effect transistor (MOSFET). It is part of a wide range of FETs and MOSFETs developed by IXYS Integrated Circuits Division (ICD). This type of FET is used mainly for switching, but can also be used for amplifying or linear applications.

An IGFET is basically an electronic switch. When a voltage is applied to the gate terminal, the device turns on, allowing current to flow through the drain and source terminals. When the gate voltage is removed, the device shuts off and the current stops flowing. The IXFX120N20 is used in power electronics applications like DC-DC converters, motor controllers, and power electronics inverters.

This type of FET also offers superior switching capability compared to BJT switches. The device has very low ON-resistance, which allows it to perform high-speed switching with very low voltage drops. It also has a very small input capacitance and output capacitance, which makes it ideal for high-frequency switching applications. And because the device has a very small gate charge, the switching times are very small and the device can be switched on and off very quickly. The IXFX120N20 also offers very low gate charge, which helps to reduce EMI and improves ESD protection performance.

The IXFX120N20 also has an on-resistance under 2 Ohms, making it suitable for high-end power applications. It has an integrated protection diode, which makes it suitable for high-current applications. It also has an integrated leakage inductor and a high-side drive voltage (VCS), making it suitable for high-side switching.

The IXFX120N20 MOSFET is suitable for a variety of applications, from low-end switching applications to high-end power applications. It is capable of switching large amounts of current, such as those needed for motor control, and is capable of high-frequency switching. It is a highly reliable and cost-effective device that is suitable for many applications.

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