IXTH02N450HV

Vgs(th) (Max) @ Id:	6.5V @ 250µA
Package / Case:	TO-247-3 Variant
Supplier Device Package:	TO-247HV
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	113W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	246pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10.6nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	625 Ohm @ 10mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	200mA (Tc)
Drain to Source Voltage (Vdss):	4500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<%IXTH02N450HV is a type of field-effect transistor (FET) developed by IXAR Corporation. It is a single-gated MOSFET, which is typically used as a power switch in applications such as DC-DC voltage regulators or motor controllers. This transistor is designed to operate efficiently in both low-voltage and high-current conditions, making it an ideal choice for applications where power efficiency and low power dissipation are a priority.The IXTH02N450HV FET is composed of a N-type MOSFET chip and a P-type substrate. The substrate serves as the drain, while the MOSFET is the source. The FET is typically packaged with an insulated gate electrode and termination contacts that enable efficient heat dissipation.The IXTH02N450HV operates in a three-terminal configuration. The gate terminal is connected to the source, while the source is connected to the channel between the source and the drain. When a voltage is applied to the gate, electrons will flow from the source to the drain, creating a conducting channel. This current is determined by the applied gate voltage and the size of the channel.The IXTH02N450HV is a versatile device that can work in many applications. It is suitable for use as an on-board or off-board power switch, replacing older power control devices that consume more energy. The IXTH02N450HV can also be used in low-voltage, high-current circuits. Since it has low parasitic capacitance, it is a good choice for high-frequency switching applications.In order to maximize the efficiency of the IXTH02N450HV, it should be used in a circuit with the device operating in either its linear or saturation region. Its linear and saturation points are determined by its RDSon (drain-source on resistance) and the gate voltage applied to the device. The IXTH02N450HV has an RDSon of 2mOhms and can handle a maximum current of 75A.Finally, the IXTH02N450HV has an exceptionally fast switching speed and improved power efficiency compared to traditional power switches. The fast switching speed allows applications with long switching intervals to benefit from increased efficiency gains, while the improved power efficiency helps to reduce power dissipation and improve system reliability. Together these characteristics make the IXTH02N450HV an ideal choice for many power switching applications.%>

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