IXTH24N65X2

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The IXTH24N65X2 is a high-voltage insulated-gate field-effect transistor (IGFET) used in a variety of applications including power management, industrial applications and motor control. It is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), and as such, it has many advantages over other types of transistors, such as low leakage current, high-speed switching and low power consumption. In this article, we will take a look at what this particular device does, its application field and working principle.

The IXTH24N65X2 is a vertical-channel power MOSFET designed for high-voltage applications, up to 500V. It has a maximum drain-source voltage (Vds) of 650V and features a gate charge (Qg) of 24nC. It can also handle higher gate voltages up to 36V, which makes it suitable for motor control and other applications requiring higher gate voltages. The IXTH24N65X2 is also designed to provide a very low on-state resistance (RDS(on)), with a nominal maximum figure of 0.65Ω. This low resistance, combined with the high voltage rating and gate-charge rating, makes this device suitable for use in a wide variety of applications.

The IXTH24N65X2 is mostly used in power management applications, such as switching power supplies, motor and lighting controls, and voltage regulation. This MOSFET is also well-suited to industrial applications, such as battery and solar cell charging, HVAC, and LED lighting. The IXTH24N65X2 is a vertical-channel MOSFET, which means that its drain and source are on the same side, making it well-suited for vertical power supply designs. The package is DPAK, meaning that it can be mounted to a printed circuit board for industrial automation applications.

The working principle of the IXTH24N65X2 is fairly straightforward and is typical of most power MOSFETs. When a positive voltage is applied to the gate of the MOSFET, it will allow current to flow through its drain to its source. The amount of current that can flow through the device is determined by the size of the channel that is created in the device due to the voltage on the gate. The higher the voltage applied to the gate, the larger the channel, meaning more current can flow through it.

The IXTH24N65X2 is an excellent choice for high-voltage applications, and it has the added benefit of being able to handle higher gate voltages up to 36V. This makes the device suitable for motor control and other applications requiring higher gate voltages. The device also has low leakage current, high-speed switching, and low power consumption, which makes it an effective choice in a variety of applications.

In summary, the IXTH24N65X2 is a high-voltage insulated-gate field-effect transistor (IGFET) used in a variety of applications, including power management, industrial applications, and motor control. It has a maximum drain-source voltage of 650V, a gate charge (Qg) of 24nC, and a very low on-state resistance of 0.65Ω. It is also well-suited for use in high-voltage applications due to its ability to handle higher gate voltages. The working principle of the IXTH24N65X2 is also straightforward, and it is typical of most power MOSFETs.

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