IXTH12N100 Allicdata Electronics
Allicdata Part #:

IXTH12N100-ND

Manufacturer Part#:

IXTH12N100

Price: $ 9.97
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 12A TO-247
More Detail: N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO...
DataSheet: IXTH12N100 datasheetIXTH12N100 Datasheet/PDF
Quantity: 1000
30 +: $ 9.06066
Stock 1000Can Ship Immediately
$ 9.97
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: MegaMOS™
Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH12N100 is a standard MOSFET (metal-oxide-semiconductor field-effect transistor) typically used for switching applications. It is manufactured by IXYS Corporation, a leading supplier of power integrated circuits and discrete semiconductors.

A MOSFET is a type of transistor, so named due to the way in which it creates an electrical field. It is an insulated-gate device, meaning that when a voltage is applied between a gate and the source or drain, the device’s resistance increases or decreases accordingly. A MOSFET is generally used to switch an electrical signal or current on and off, but can also be used as an amplifier in certain cases.

The IXTH12N100 is a single MOSFET device. It is composed of an N-channel MOSFET, which features a drain-source voltage rating of 800V and a drain-source current of 100A, with a gate-source voltage rating of 20V. The device also has a maximum junction temperature of 175 degrees Celsius, along with a wide range of other specifications.

The IXTH12N100 is primarily used for switching applications, though it can also be used as an amplifier if necessary. It is suitable for applications including power supplies, automotive systems, and other high-power, high-voltage equipment. It is also particularly useful for applications that require high-power, low-noise circuits, as the MOSFET design minimizes the amount of current noise generated. Additionally, its high voltage and current ratings make it suitable for controlling circuits with higher power requirements.

Due to its ease of use and low cost, the IXTH12N100 has become a popular choice for designers. The device’s small size and low power consumption make it ideal for use in space-constrained applications, while its high performance and reliability make it a good choice for consistently reliable operation. Furthermore, the device offers a wide operating temperature range, ensuring it is well-suited for both indoor and outdoor use.

In summary, the IXTH12N100 is a single MOSFET device that is designed for power applications. It is highly reliable and has a wide range of features, making it suitable for a wide variety of projects. With the device’s ease of use and low cost, it has become a popular choice for designers, making it a great choice for any project requiring a high-power, high-performance MOSFET.

The specific data is subject to PDF, and the above content is for reference

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