Allicdata Part #: | IXTH102N20T-ND |
Manufacturer Part#: |
IXTH102N20T |
Price: | $ 3.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 102A TO-247 |
More Detail: | N-Channel 200V 102A (Tc) 750W (Tc) Through Hole TO... |
DataSheet: | IXTH102N20T Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 3.48852 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 (IXTH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 750W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | TrenchHV™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 102A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTH102N20T is a Insulated-Gate Field Effect Transistor (IGFET) which belongs to the family of single channel MOSFETs (Metal Oxide Semiconductor FET). Despite the low complexity of IXTH102N20T, this versatile device remains one of the most popular FETs used in many different applications. This article will discuss the application fields and working principles of this MOSFET.
First and foremost, IXTH102N20T is mainly used to switch, drive and amplify small and low-power electrical signals. This is mostly due to its low on-state voltage drop, low gate drive current, low gate charge and low ESD protection against voltages of up to ±10 kV. IXTH102N20T can also be used in high-voltage applications in surge and relay protection circuits, protected against transient voltages up to 1500 V.
In addition to switching and driving low-power signals, IXTH102N20T is also very good at operating as amplifiers and drivers for larger signals. It has an extremely low input capacitance which makes it ideal for use in high-frequency applications. It can also be used as an inverter in many circuits because it has low switching times. As well as being used as an amplifier or driver, IXTH102N20T can also be used as a three-terminal adjustable regulator in certain applications.
Now let us take a look at the working principle of IXTH102N20T FET. An Insulated Gate Field Effect Transistor (IGFET) is fundamentally similar to a junction field-effect transistor (JFET). It is a semiconductor device comprised of a channel, gate, source, and drain that is used to control the flow of electrons between the source and the drain. The gate of the IXTH102N20T MOSFET is isolated from the channel and serves as an interface between the three terminals. When a voltage is applied to the gate of the IXTH102N20T, the effect is an electrostatic field that modulates the conducting properties of the channel in the MOSFET. This modulation of the channel is what allows for the controlling of the voltage and current between the source and the drain.
As stated previously, IXTH102N20T is a popular choice for many different applications because of its versatility. It is widely used in switching and driving applications due to its low on-state voltage drop and low gate drive current. Furthermore, its low input capacitance makes it ideal for use in high frequency applications. As well as this, IXTH102N20T can be used as an inverter and three-terminal adjustable regulator in certain applications. Understanding the working principle of IXTH102N20T Insulated Gate Field Effect Transistor (IGFET) is essential in order to know the full potential of this device.
The specific data is subject to PDF, and the above content is for reference
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