IXTH12N100Q Allicdata Electronics
Allicdata Part #:

IXTH12N100Q-ND

Manufacturer Part#:

IXTH12N100Q

Price: $ 9.95
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 12A TO-247
More Detail: N-Channel 1000V 12A (Tc) Through Hole TO-247 (IXT...
DataSheet: IXTH12N100Q datasheetIXTH12N100Q Datasheet/PDF
Quantity: 1000
30 +: $ 9.04722
Stock 1000Can Ship Immediately
$ 9.95
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH12N100Q is a type of field-effect transistor (FET) that helps to amplify or switch signals within electronic devices. It is a single-gate device that provides excellent performance, reliability and low power consumption. As a member of the IXT series from NXP Semiconductors, the IXTH12N100Q offers the enhanced features that are essential for the current digital designs. It is suitable for a wide range of applications, mainly due to its ease of use, high switching speed and low threshold.

The IXTH12N100Q is an enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a three-terminal device that has a drain, gate and source terminal. When the gate terminal is driven above a certain threshold voltage, the IXTH12N100Q is turned on and allows the flow of electrons through the drain and source terminals. When the gate voltage is decreased below the threshold voltage, the device is turned off, blocking any current flow. The maximum drain-source on-state resistance of the IXTH12N100Q is also relatively low, which helps to achieve better impedance matching when building RF (radio frequency) amplifiers or other high frequency circuits.

The IXTH12N100Q is an ideal choice for designers working on various types of digital, analog and power circuits. It can be used for wireless applications such as WiFi and Bluetooth, for RF and microwave circuits, for satellite systems and for electronic control circuits, among other applications. It can also be used as a switch in home automation systems, computers and telecommunications systems. Its low threshold and gate capacitance allow for higher frequency switching and reduce power losses.

As with all FETs, in order to use the IXTH12N100Q correctly, the operating voltage must be monitored so that it does not exceed the maximum voltage rating. The device also needs to be securely mounted on the printed circuit board (PCB), and it must be placed away from any heat sources. It is also important to ensure that the drain and gate terminals are sufficiently decoupled to reduce noise in the system.

The IXTH12N100Q is a cost-effective and reliable device that is designed to meet the current performance requirements for digital systems. It is suitable for a wide range of applications, and its features make it an ideal choice for designers. It is important to take precautions when designing with the device, however, as improper use may lead to damaged or malfunctioning applications.

The specific data is subject to PDF, and the above content is for reference

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