IXTH140P10T Discrete Semiconductor Products |
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Allicdata Part #: | IXTH140P10T-ND |
Manufacturer Part#: |
IXTH140P10T |
Price: | $ 8.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 100V 140A TO-247 |
More Detail: | P-Channel 100V 140A (Tc) 568W (Tc) Through Hole TO... |
DataSheet: | IXTH140P10T Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 7.68012 |
Series: | TrenchP™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 400nC @ 10V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 31400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 568W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
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IXTH140P10T is a type of insulated-gate field-effect transistor. It is a heavy-duty semiconductor device used in electronic circuits to control the flow of electricity. As a MOSFET, it can be used to regulate voltage and current in switching applications, permitting only conductive current to pass while blocking undesirable current flow. It has been designed to provide reliable, economical operation in a variety of electronic devices in applications such as pulsed power supplies and protection circuits.
As a single device, IXTH140P10T consists of 1 to 2 MOSFETs in an individual package with no connecting components. It has a drain-source breakdown voltage (V(DSS)) of 300 volts, an on-resistance at 6 amperes (R(DS) (ON)) of 0.075 ohms, an input capacitance (Ciss) of 159 picofarads, and a maximum operating temperature of 125 degrees Celsius. The device is manufactured using an integrated circuit (IC) process, meaning that it contains a number of individual components on a single integrated chip.
The IXTH140P10T operates on the principle of an insulated-gate field-effect transistor, also known as an IGFET, which is a type of semiconductor switch. This device uses a gate to control the flow of electric current between a source and a drain. When the gate voltage is applied, a current is allowed to flow between the source and drain. When the gate voltage is removed, the current flow ceases. This allows for switching functions, as well as voltage and current regulation.
Other than voltage and current regulation, the IXTH140P10T is commonly used in power management applications such as DC-DC converters, and motor controllers. It also finds use in automotive and industrial applications where it can be used to drive high-current loads, making it an ideal choice for applications with high continuous operating currents. In addition, it can be used in reverse protection circuits and inductive loads where the switch must handle large surges of energy in the case of a load disconnect or a fault.
The IXTH140P10T is designed to offer reliable operation and high efficiency in a variety of electronic devices. With its integrated components and IC process, it is able to operate at high temperatures and currents. Its breakdown voltage and on-resistance also make it suitable for a range of power management applications. Furthermore, its gate prevents unwanted current flow, making it an ideal choice for use in reverse protection and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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