| Allicdata Part #: | IXTH16N10D2-ND |
| Manufacturer Part#: |
IXTH16N10D2 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 16A TO-247 |
| More Detail: | N-Channel 100V 16A (Tc) 830W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH16N10D2 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 830W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 5700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 225nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 64 mOhm @ 8A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | 0V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTH16N10D2 is an insulated gate Field Effect Transistor (IGFET) developed by Infineon Technologies, in tandem with Trench Gate MOSFET (TG-MOSFET) technology. It is a single MOSFET with a vertical P channel structure and a maximum drain-source voltage (VDS) rating of up to 16V. It has a wide range of uses in various applications, and is often used in low voltage switching devices, such as adjustable DC-DC converters, negative DC-DC converters, and switch mode power supplies (SMPS).
The IXTH16N10D2 is a very reliable, durable and high-performance device, due to its high ripple current handling capabilities and its integrated temperature compensation and thermal protection. The device has a low on-state resistance (RDS on) of only 0.86-ohms at an operating temperature of 25°C. This allows the device to provide efficient, fast switching power to the load, enabling it to handle large currents with minimal losses. The device also features a low turn-on gate-source voltage (VGS) of only 3V, enabling it to be operated in various applications, including low voltage and room temperature applications.
The IXTH16N10D2 is usually operated in enhancement mode, where the VGS is higher than the threshold voltage (VGS(th)) for the device to be turned on. In this state, the device is able to conduct a current from the source to the drain. However, once the VGS is lower than VGS(th), the device will then be turned off, preventing current flow from the source to the drain. This ability to turn off and on quickly is what makes the IXTH16N10D2 an ideal choice for low voltage switching applications.
Aside from its use in low voltage switching applications, the IXTH16N10D2 can also be used in other applications, such as audio amplifiers, voltage regulators, lighting applications, and power conditioning and protection. In addition, it can be used in automotive, industrial and medical applications. It is also compatible with various logic devices, such as the CMOS logic family of logic gates.
The IXTH16N10D2 is available in a wide range of packages, including TO-236AB, DPAK, D2PAK and SIP packages. This allows for greater flexibility and easier implementation of the device in various applications.
In conclusion, the IXTH16N10D2 is a high-performance, energy-efficient, and durable single-gate MOSFET device, with a wide range of applications in various low voltage switching, audio amplifiers, voltage regulators, lighting applications, power conditioning and protection as well as automotive and medical applications. The device has an integrated temperature compensation and thermal protection, and is available in various packages.
The specific data is subject to PDF, and the above content is for reference
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