Allicdata Part #: | IXTH1N170DHV-ND |
Manufacturer Part#: |
IXTH1N170DHV |
Price: | $ 7.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 1700V 1A (Tj) 290W (Tc) Through Hole TO-... |
DataSheet: | IXTH1N170DHV Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.80885 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1700V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Rds On (Max) @ Id, Vgs: | 16 Ohm @ 500mA, 0V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3090pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 290W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247HV |
Package / Case: | TO-247-3 Variant |
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The IXTH1N170DHV is a type of FET, a field effect transistor that utilizes a MOSFET structure. FETs are specialized transistors used in many electronic applications, but the basic operating principle can be applied to many other electronic devices. In a FET, an electric field is used to control the flow of current across the device, along with the applied voltage. The IXTH1N170 DHV utilizes this principle to control current flow from a source to a drain.
The first part of the IXTH1N170DHV is the gate. This is the terminal which is used to control the current flow. A voltage is applied to the gate, which is then used to create an electric field around the device. This electric field will cause the current to flow through the device in only one direction. This can be used to control the amount of current flowing through the device, allowing for precise control of current flow.
The other terminals of the IXTH1N170DHV are the source and the drain. The source terminal is the point at which current enters the device, while the drain is the point at which it exits. A voltage is applied to the source and the drain terminals which are used to control the current flow. The source and drain terminals can be used to control the amount of current that enters and leaves the device, allowing for precise control of current flow.
The IXTH1N170DHV also utilizes a MOSFET structure in order to increase the effectiveness of the device. The MOSFET structure gives the device greater control over the current flow through it, providing a greater level of precision. This makes the device especially useful in applications that require precise control over the current flow.
The IXTH1N170DHV is used in a wide range of applications. The most common application for the device is in power electronics and switching circuits. These applications utilize the device\'s ability to precisely control the current flow and direction. This makes the device ideal for use in power converters, rectifiers, and power amplifiers. The device is also frequently used in various types of communication systems, such as cellular phones, GPS systems, and wireless networks, as well as in industrial automation systems.
The IXTH1N170DHV is a versatile device that can be used for a wide variety of applications. Its ability to precisely control current flow and direction make it a valuable tool for many electronic applications. The device is also relatively affordable, making it a popular option in many industries and applications. As such, it is likely to remain a popular choice for many years to come.
The specific data is subject to PDF, and the above content is for reference
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