| Allicdata Part #: | IXTH3N120-ND |
| Manufacturer Part#: |
IXTH3N120 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1200V 3A TO-247 |
| More Detail: | N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH3N120 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTH3N120 is a type of field effect transistor (FET) with a single metal-oxide-semiconductor (MOS) structure. It is a small-scale, high-side, N-channel enhancement-mode FET, which is commonly used in applications such as power supplies, amplifiers, switching circuits, and logic support. This article will provide an overview of the IXTH3N120 application field, as well as its working principle.
Application Field of IXTH3N120
The IXTH3N120 is used in a variety of applications. It can be found in various high-current circuits which require a reliable, steady source. It can also be used in low-frequency switching circuits, pulse circuits, and inverters. This device is also found in charged capacitor switching and latching circuits. Its voltage range is from 10V to 60V, making it suitable for a wide range of applications.
The IXTH3N120 is widely applicable in the field of power supplies. It is used in conjunction with other components such as resistors, capacitors, and inductors to form switching regulators and DC-DC converters. It is also used in AC-DC converters, boost converters, and buck converters. Furthermore, it can be found in battery chargers, charging lines, and high-efficiency light circuits. Thanks to its advanced technology, it is also capable of operating in a highly efficient manner.
Working Principle of IXTH3N120
At its core, the IXTH3N120 is a P-channel FET. This means that it is an enhancement-mode device, which means that the gate voltage is used to control the on/off state of the device. When the gate voltage is higher than the threshold voltage, the device is in the on-state, and current can pass through the transistor. When the gate voltage is lower than the threshold voltage, the device is in the off-state, and current cannot pass through the transistor.
The IXTH3N120 is particularly useful for a wide range of applications because it has a high current-controlling capability and is well-suited for high-power applications. Moreover, its enhanced technology ensures a stable performance and an improved efficiency. It is also known for its longer lifetime and lower internal capacitance.
In conclusion, the IXTH3N120 is an advanced form of field effect transistor with a single metal-oxide-semiconductor structure. It is widely used in applications such as power supplies, amplifiers, switching circuits, and logic support. It has a wide range of voltage support, has a high current-controlling capability, and is known for its improved efficiency. Its working principle is based on using the gate voltage to control the on/off state of the device.
The specific data is subject to PDF, and the above content is for reference
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| IXTH240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
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