| Allicdata Part #: | IXTH440N055T2-ND |
| Manufacturer Part#: |
IXTH440N055T2 |
| Price: | $ 7.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 55V 440A TO-247 |
| More Detail: | N-Channel 55V 440A (Tc) 1000W (Tc) Through Hole TO... |
| DataSheet: |  IXTH440N055T2 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 6.31216 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1000W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 25000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 405nC @ 10V |
| Series: | TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 440A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH440N055T2 is a silicon N-Channel Mosfet transistor device. It is primarily used in applications that require high-voltage and low-power performance. It is well-suited for dc-to-dc conversion, motor control, and automotive applications.
The IXTH440N055T2 is an enhancement-mode MOSFET with an N-type channel that is optimized for high voltage operation. It has an enhanced fast switching speed, which makes it ideal for use in applications where switching speed is critical. The device also has low gate charge and low on-state resistance, making it efficient in terms of power consumption.
The IXTH440N055T2 is designed to be used in medium-power applications. It is rated for up to 55V drain-source breakdown voltage and can handle loads up to 450mA. It is also designed with a low maximum on-state resistance of 0.072 Ohms.
In terms of operation, the IXTH440N055T2 works by allowing electric current to flow between its drain and source when a gate voltage is applied to its gate terminal. The gate voltage is responsible for controlling the electrical characteristics of the device, such as the drain-source current, drain-source voltage, and on-state resistance. The gate voltage is also responsible for turning the device on and off. When the gate voltage is applied, the device is turned on and electric current is allowed to flow between the drain and source terminals. When the gate voltage is removed, the device is turned off and no current is allowed to flow through it.
The IXTH440N055T2 is a useful device in a variety of applications, such as motor control and dc-to-dc converter designs, due to its high voltage ratings, low maximum on-state resistance, and fast switching speed. Its high voltage and current ratings make it suitable for applications with higher power requirements. Its low on-state resistance and high switching speed make it an efficient device for applications where power consumption and speed are critical.
In short, the IXTH440N055T2 is a useful MOSFET device designed for high-voltage and low-power applications. It is designed with an N-type channel and is optimized for high voltage operation. It has a low maximum on-state resistance and is rated for up to 55V drain-source breakdown voltage. It is a fast-switching device and is suitable for use in medium-power applications. It can be used in dc-to-dc converters, motor control, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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