IXTH68P20T Discrete Semiconductor Products

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The IXTH68P20T is a high-current, relatively low voltage MOSFET from International Rectifier. It is available in a TO-263 (SOT-223) package and is designed for low power switching and linear applications. The IXTH68P20T has an “enhanced” version, the IXTH68P20TE, which is a higher power version.

The IXTH68P20T is a n-channel MOSFET, which means that it can be used in either a high side or low side switching configuration, allowing it to be easily incorporated into any circuit. It is capable of up to 20A of continuous drain current and up to 400V of drain-source capability. The device has an exceptionally low on-state resistance of 0.55 mOhm, meaning it can handle high switching frequencies without suffering from excessive power losses. It also has a high maximum transconductance value, which makes it suitable for use in power amplification applications.

The IXTH68P20T is ideal for use in a variety of switched power applications, such as switches for switching power supply circuits, high-side/low-side switches for automotive circuits and inverters, and as low signal switching elements in signal circuits, such as logic circuits. It can also be used in linear applications, such as signal line pre-drivers, variable voltage circuits, and LED current sources.

The working principle of the IXTH68P20T MOSFET is based on the Gate Oxide Insulator Theory. It is essentially the same as the working principle of a typical transistor. This is where an insulating layer of silicon dioxide, commonly referred to as the gate oxide, exists between a metal conductor (the gate) and a semiconducting material (the source and drain). When voltage is applied to the gate, it creates an electric field which changes the electrical properties of the gate oxide and allows current to flow between the source and drain.

The device has a relatively low threshold voltage (3v) so the gate is able to switch relatively low voltages (3v- 400V) with just a few volts of gate voltage. It also has a high gate charge, which is necessary for operating at higher frequencies. This is done by controlling the amount of current flowing between the source and drain. This is done by controlling the voltage applied to the gate.

In summary, the IXTH68P20T is a high-current and low voltage MOSFET which is designed for low power switching and linear applications. It is very suited for use in both switched power applications, such as switching and inverter circuits, and in linear applications like signal pre-drivers and LED current sources. Its working principle is based on the Gate Oxide Insulator Theory, where an insulating layer between the gate and the source/drain allows current to flow when a voltage is applied to the gate. It is also capable of handling high switching frequencies, making it a suitable option for many power applications.

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