
Allicdata Part #: | IXTH6N120-ND |
Manufacturer Part#: |
IXTH6N120 |
Price: | $ 6.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 6A TO-247AD |
More Detail: | N-Channel 1200V 6A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 6.65000 |
10 +: | $ 6.45050 |
100 +: | $ 6.31750 |
1000 +: | $ 6.18450 |
10000 +: | $ 5.98500 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 (IXTH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTH6N120 is a 6A standard level, insulated gate bipolar transistor (IGBT) module from IXYS Corporation. It features the latest IXTH6F17 series and was designed for application with the automotive industry in mind.
The IXTH6N120 is designed to enable high power switching at high frequencies. It functions by abstracting the electrical signal sent to it, and selectively turning it on or off depending on the signal. By allowing the signal to be completely abstracted away, the IXTH6N120 can be used in applications that require protection from excessive voltages and currents. Additionally, its solid state construction allows the module to operate at temperatures up to 150°C.
The IXTH6N120 is commonly used in the automotive industry, due to its ability to handle high power switching efficiently, reliably and at high frequencies. This can be beneficial in power inverters, powertrain systems, electric vehicles, and motors. Additionally, it is also used in applications such as solar panel inverters and consumer appliances.
The IXTH6N120 utilizes insulated gate bipolar transistor (IGBT) topology, in order to deliver performance features such as improved power density, short circuit capability, and low switching losses. It is designed for use in devices that require high power switching, such as for motor control, power supply design and more. Additionally, it also features PTC (positive temperature coefficient) thermistors, which protect the module from overcurrent, overvoltage, and short circuit conditions.
In summary, the IXTH6N120 is an insulated gate bipolar transistor (IGBT) module from IXYS Corporation. It is designed for use in the automotive industry, due its ability to allow high power switching at high frequencies. It is commonly used in power inverters, powertrain systems, electric vehicles, and motors, as well as applications such as solar panel inverters and consumer appliances. This module utilizes IGBT topology, and also features PTC thermistors, which protect the module from overcurrent, overvoltage, and short circuit conditions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXTH1N200P3HV | IXYS | 5.04 $ | 21 | MOSFET N-CH 2000V 1A TO-2... |
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