Allicdata Part #: | IXTT10P50-ND |
Manufacturer Part#: |
IXTT10P50 |
Price: | $ 10.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 500V 10A TO-268 |
More Detail: | P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXTT10P50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 9.88470 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT10P50 is a single D-MOS transistor designed to be used as a small signal switching device. It is designed for use in linear switching applications in power supplies, audio amplifiers, and communications systems. The IXTT10P50 is a Field Effect Transistor (FET) with an integrated n-channel MOSFET in a standard small footprint, therefore allowing for high speed operation and low threshold voltage operation. Additionally, this device also features an integrated dual gate structure and a wide voltage range of operation, making it an ideal choice for a variety of applications and voltage range requirements.
The IXTT10P50’s build utilizes an N-Channel, single gate MOSFET in an integrated circuit design, which allows for reduced power consumption and improved speed capabilities. This FET has a breakdown voltage ranging from 1.0V to 4.6V and a power dissipation rating ranging from 25 to 220 mW, allowing for a variety of operational needs to be served. Additionally, the IXTT10P50 also offers a 600 MHz high frequency switching, making it a great application for digital or radio frequency switching.
When operating the IXTT10P50, there are several important factors to consider. The most important factor to consider is the device\'s maximum operating junction temperature. At the maximum junction temperature, the device can operate at its highest rated power dissipation and its highest speed capability. Additionally, the following must also be taken into account: gate source and drain capacitance, the gate source leakage current, and the forward and reverse transfer characteristics of the device. All of these parameters must be considered to ensure that the device is operating properly.
The IXTT10P50 is also designed to offer excellent intermodulation noise characteristics. This is achieved via a two-dimensional FET structure which helps to reduce the transistor noise due to the reduced junction capacitance. Additionally, by using a double gate design, the device can also maintain a high current density and fast switching times.
The IXTT10P50 is a great choice for a variety of applications where small signal switching is required. Its wide voltage range and fast switching speed make it ideal for audio amplifiers, communications systems and power supplies. Additionally, its excellent intermodulation noise characteristics and low power dissipation make it a great choice for digital or radio frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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