IXTT52N30P Allicdata Electronics
Allicdata Part #:

IXTT52N30P-ND

Manufacturer Part#:

IXTT52N30P

Price: $ 4.10
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 52A TO-268
More Detail: N-Channel 300V 52A (Tc) 400W (Tc) Surface Mount TO...
DataSheet: IXTT52N30P datasheetIXTT52N30P Datasheet/PDF
Quantity: 997
30 +: $ 3.68403
Stock 997Can Ship Immediately
$ 4.1
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IntroductionThe IXTT52N30P is a MOSFET (metal–oxide–semiconductor field-effect transistor) used in a variety of electronic applications. It is a single P-type MOSFET rated at a maximum drain-source voltage of 30V with a maximum drain current of 2.5A. This MOSFET can be used in switching, amplifier and other high-performance integrated circuit applications.Application fieldsThe IXTT52N30P MOSFET is most commonly used in power management applications like power conversion, audio power amplifiers, load switches, DC-DC converters, radio-frequency circuits and low-voltage LED lighting. Its low on-resistance ensures high efficiency in all of these applications.In addition, the IXTT52N30P can be used in motor control operations like motor speed control and motor direction control. Its high drain-source current rating makes it an ideal choice for applications where large currents are necessary.Working principleMOSFETs work on a principle of electrical conductivity. When a voltage is applied to the gate electrode of the MOSFET, it triggers an electrical field which causes current to flow from the source to the drain.This current is controlled by the voltage applied to the gate. When the applied voltage is increased, the current flow also increases. The main advantage of using a MOSFET is that it has a very low on-resistance, making them extremely efficient in switching applications.AdvantagesThe use of the IXTT52N30P MOSFET provides several advantages compared to other types of transistors. These advantages include high current rating, fast switching times and low on-resistance.The high current rating of the IXTT52N30P MOSFET allows it to be used in applications needing large currents, such as motor control and power management. Its low on-resistance also results in high efficiency, reducing power losses and resulting in cooler operation. Finally, its fast switching times ensure improved response times in applications like motor speed control.ConclusionThe IXTT52N30P is a single P-type MOSFET with a maximum drain current of 2.5A and a maximum drain-source voltage of 30V. It is most commonly used in power management applications, motor control operations and high-performance integrated circuits. The advantages of using this MOSFET include fast switching speeds, low on-resistance and high current ratings. It is an ideal choice for applications requiring efficient and reliable power management or motor control operations.

The specific data is subject to PDF, and the above content is for reference

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